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AWINIC Shanghai Awinic Tech AW3112DNR 30V PNP Bipolar Transistor for Linear Charging of Lithium Batteries
AWINIC Shanghai Awinic Tech AW3112DNR 30V PNP Bipolar Transistor for Linear Charging of Lithium Batteries
Specifications
Drain to Source Voltage :
-
Current - Continuous Drain(Id) :
-
RDS(on) :
-
Gate Threshold Voltage (Vgs(th)) :
-
Reverse Transfer Capacitance (Crss@Vds) :
-
Number :
-
Input Capacitance(Ciss) :
-
Pd - Power Dissipation :
-
Gate Charge(Qg) :
-
Description :
DFN-6L(2x2) Single FETs, MOSFETs RoHS
Mfr. Part # :
AW3112DNR
Model Number :
AW3112DNR
Package :
DFN-6L(2x2)
Description

Product Overview

The AW3112 is a 30V PNP power bipolar transistor integrated with a 20V trench NMOSFET, functioning as a base switch. Manufactured using planar epitaxial process technology, it offers a low collector-emitter saturation voltage and high current gain, making it particularly suitable for high-current linear charging of lithium batteries. The device is available in a compact DFN2X2-6L package and operates within a temperature range of -40 to +150. Key applications include battery charging and power management for portable electronic devices.

Product Attributes

  • Brand: Shanghai A-Power Electronics Technology Co., Ltd.
  • Certifications: ROHS compliant

Technical Specifications

Model Operating Temperature Range Package Type Device Marking Delivery Form
AW3112DNR -40~150 DFN2X2-6L AW12 Tape & Reel (3000 pcs/)
Parameter Rating Unit
30V PNP BJT Absolute Maximum Ratings
Collector-Base Voltage (Vcbo) -40 V
Collector-Emitter Voltage (Vceo) -32 V
Emitter-Base Voltage (Vebo) -6 V
Collector Current (Ic) -3 A
Collector Peak Current (Icm) -6 A
20V NMOSFET Absolute Maximum Ratings
Drain-Source Voltage (Vdss) 20 V
Gate-Source Voltage (Vgss) 8 V
Drain Current (Id) 180 mA
Drain Peak Current (Idp) 360 mA
Temperature, Power Dissipation, and Thermal Resistance
Power Dissipation (Ptot) 1.5 W
Junction Temperature (Tj) 150
Storage Temperature (Tstg) -65~150
Lead Temperature (Tl) 260
Thermal Resistance Coefficient ( JA) 85.6 /W
Symbol Parameter Test Conditions Min Typical Max Unit
30V PNP BJT Electrical Characteristics (T=25 unless otherwise specified)
BVceo Collector-Emitter Breakdown Voltage Ic=-10mA, Ib=0mA -32 V
BVcbo Collector-Base Breakdown Voltage Ic=-0.1mA, Ie=0mA -40 V
BVebo Emitter-Base Breakdown Voltage Ie=-1mA, Ic=0mA -6 V
Icbo Collector Leakage Current Vcb=-30V -0.1 uA
Iebo Emitter Leakage Current Veb=-5V -0.1 uA
Vce(sat) Collector-Emitter Saturation Voltage Ic=-1A, Ib=-20mA -0.35 V
Vbe(sat) Base-Emitter Saturation Voltage Ic=-1A, Ib=-20mA -1.2 V
HFE1 DC Current Gain (High Current) Ic=-1A, Vce=-2V 100
HFE2 DC Current Gain (Low Current) Ic=-0.1A, Vce=-2V 200
20V NMOSFET Electrical Characteristics (T=25 unless otherwise specified)
BVdss Drain-Source Breakdown Voltage Vgs=0V, Ids=250uA 20 V
Vth Threshold Voltage Vgs=Vds, Ids=250uA 0.4 1.0 V
Igss Gate Leakage Current Vds=0V, Vgs=8V 100 nA
Idss Drain Leakage Current Vgs=0V, Vds=20V 1 uA
Rds(on) Drain-Source On-Resistance Vgs=2.5V, Id=50mA 0.5
Rds(on) Drain-Source On-Resistance Vgs=1.5V, Id=50mA 1
Vsd Body Diode Forward Voltage Isd=1A, Vgs=0V 0.5 1.2 V
Symbol Dimensions Unit
DFN2X2-6L Package Dimensions
A 0.700 - 0.750 - 0.800 mm
A1 0.000 - 0.025 - 0.050 mm
A3 0.203 REF
D 1.924 - 2.000 - 2.076 mm
E 1.924 - 2.000 - 2.076 mm
D1 0.850 - 0.950 - 1.050 mm
E1 0.700 - 0.800 - 0.900 mm
D2 0.200 - 0.300 - 0.400 mm
E2 0.700 - 0.800 - 0.900 mm
e1 0.650 TYP
e2 0.325 TYP
k 0.200 MIN
b 0.250 - 0.300 - 0.350 mm
e 0.650 TYP
L 0.300 - 0.350 - 0.400 mm

2511110935_AWINIC-Shanghai-Awinic-Tech-AW3112DNR_C498339.pdf

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AWINIC Shanghai Awinic Tech AW3112DNR 30V PNP Bipolar Transistor for Linear Charging of Lithium Batteries

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Product Detail
Drain to Source Voltage :
-
Current - Continuous Drain(Id) :
-
RDS(on) :
-
Gate Threshold Voltage (Vgs(th)) :
-
Reverse Transfer Capacitance (Crss@Vds) :
-
Number :
-
Contact Supplier
AWINIC Shanghai Awinic Tech AW3112DNR 30V PNP Bipolar Transistor for Linear Charging of Lithium Batteries

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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