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1700V 8A N Channel Silicon Carbide Power MOSFET Bestirpower BCBF170N650T1 for Industrial Electronics
1700V 8A N Channel Silicon Carbide Power MOSFET Bestirpower BCBF170N650T1 for Industrial Electronics
Specifications
Drain to Source Voltage :
1.7kV
Current - Continuous Drain(Id) :
8A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
650mΩ
Gate Threshold Voltage (Vgs(th)) :
2.8V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
2.1pF
Output Capacitance(Coss) :
17.1pF
Pd - Power Dissipation :
78W
Input Capacitance(Ciss) :
183pF
Gate Charge(Qg) :
13.2nC
Description :
1.7kV 8A 650mΩ 2.8V 78W TO-263-7 Single FETs, MOSFETs RoHS
Mfr. Part # :
BCBF170N650T1
Model Number :
BCBF170N650T1
Package :
TO-263-7
Description

Silicon Carbide Power MOSFET

The BCBF170N650T1 is a 1700V, 8A, 650m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers superior performance characteristics, including high blocking voltage, low on-resistance, and high-speed switching capabilities. These features contribute to higher system efficiency, reduced cooling requirements, increased power density, and the enablement of higher operating frequencies. The device is suitable for applications such as DC/DC converters, solar inverters, battery chargers, motor drives, and auxiliary power supplies.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide
  • Channel Type: N-Channel
  • Package: TO263-7

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (TJ = 25 unless otherwise noted)
VDSS Drain to Source Voltage 1700 V
VGSmax Gate to Source Voltage (AC f1Hz) -10 / +25 V
VGSop Recommended Operation Value -5 +20 V
ID Drain Current VGS=15V, (TC = 25) 8 A
IDM Drain Current Pulsed (Note 1) 17 A
PD Power Dissipation (TC = 25) 78 W
TJ, TSTG Operating and Storage Temperature Range -55 175
RJC Thermal Resistance, Junction to Case, Max. 1.92 /W
Tsold Soldering temperature, wave soldering only allowed at leads 260
Electrical Characteristics (TJ = 25 unless otherwise noted)
V(BR)DSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 100 A 1700 V
IDSS Zero Gate Voltage Drain Current VDS = 1700 V, VGS = 0 V 0.9 100 A
IGSS Gate-Source Leakage Current VGS = +20 V 250 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.5 mA 1.8 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 20 V, ID = 2 A 550 1000 m
VGS = 18 V, ID = 2 A 650 m
ID Drain Current VGS=20V, (TC = 25) 8.6 A
ID Drain Current VGS=15V, ( TC = 100) 6 A
Ciss Input Capacitance VGS = 0V, VDS = 1000 V, f = 1.0 MHz ,VAC = 25 mV 183 pF
Coss Output Capacitance 17.1 pF
Crss Reverse Capacitance 2.1 pF
Eoss Stored Energy in Output Capacitance 10.1 J
Qg(tot) Total Gate Charge VDS = 1200 V, ID = 2 A, VGS = -5 V / +20 V 13.2 nC
Qgs Gate to Source Charge 5.0 nC
Qgd Gate to Drain Miller Charge 4.5 nC
RG Internal Gate Resistance f = 1.0 MHz, VAC = 25 mV 25.2
td(on) Turn-On Delay Time VDS = 1000 V, ID = 2 A, VGS = -5 V / +20V, RG(ext) = 2.5 , L = 70 mH 5 ns
tr Turn-On Rise Time 17 ns
td(off) Turn-Off Delay Time 13 ns
tf Turn-Off Fall Time 55.6 ns
Eon Turn-on Switching Energy 170 J
Eoff Turn-off Switching Energy 68 J
IS Maximum Continuous Diode Forward Current 8 A
VSD Diode Forward Voltage VGS = 0 V, IS = 1 A 4.0 V
trr Reverse Recovery Time VDS = 1200 V, IS = 2 A, VGS=-5V, di/dt = 1200 A/ s 33 ns
Qrr Reverse Recovery Charge 32 nC
Irrm Peak Reverse Recovery Current 2.8 A

Ordering Information

Part Number Top Marking Package Packing Method Quantity
BCBF170N650T1 BCBF170N650T1 TO263-7 Tape & Reel 800 units

2509041652_Bestirpower-BCBF170N650T1_C49297070.pdf

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1700V 8A N Channel Silicon Carbide Power MOSFET Bestirpower BCBF170N650T1 for Industrial Electronics

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Product Detail
Drain to Source Voltage :
1.7kV
Current - Continuous Drain(Id) :
8A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
650mΩ
Gate Threshold Voltage (Vgs(th)) :
2.8V
Type :
N-Channel
Contact Supplier
1700V 8A N Channel Silicon Carbide Power MOSFET Bestirpower BCBF170N650T1 for Industrial Electronics

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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