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High Speed Line Driver P Channel MOSFET BORN SI2301S Featuring Low Gate Source Voltage Control
High Speed Line Driver P Channel MOSFET BORN SI2301S Featuring Low Gate Source Voltage Control
Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
2.3A
Operating Temperature - :
-
RDS(on) :
140mΩ@3.3V,1A
Gate Threshold Voltage (Vgs(th)) :
400mV
Reverse Transfer Capacitance (Crss@Vds) :
25pF@10V
Number :
1 P-Channel
Input Capacitance(Ciss) :
177pF@10V
Pd - Power Dissipation :
1W
Gate Charge(Qg) :
5.3nC@10V
Description :
P-Channel 20V 2.3A 1W Surface Mount SOT-23
Mfr. Part # :
SI2301S
Model Number :
SI2301S
Package :
SOT-23
Description

Product Overview

The SI2301S is a P-Channel Enhancement-Mode MOSFET designed for various switching applications. It features low RDS(on) at VGS=-4.5V, -3.3V logic level control, and comes in a Pb-Free, RoHS Compliant SOT23 package. This MOSFET is suitable for high-side load switching, general switching circuits, and high-speed line drivers.

Product Attributes

  • Package: SOT23
  • Compliance: PbFree, RoHS Compliant
  • Type: P Channel MOSFET, Enhancement-Mode

Technical Specifications

Symbol Parameter Condition Min Typ Max Unit
Common Ratings (TA=25C Unless Otherwise Noted)
VGS Gate-Source Voltage ±10 V
(BR)DSS Drain-Source Breakdown Voltage -20 V
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -50 to 150 °C
ID (Pulse) Pulse Drain Current Tested¹ TA=25°C -9 A
ID Continuous Drain Current TA=25°C -2.3 A
ID Continuous Drain Current TA=70°C -1.8 A
PD Maximum Power Dissipation TA=25°C 1 W
PD Maximum Power Dissipation TA=70°C 0.8 W
θJA Thermal Resistance Junction-Ambient Mounted on Large Heat Sink 125 °C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA -20 V
IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V (TA=25°C) -1 µA
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V (TA=125°C) -100 µA
IGSS Gate-Body Leakage Current VGS=±10V, VDS=0V ±100 nA
VGS(TH) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.4 -0.6 -1.0 V
RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-2A 125 140 mΩ
RDS(ON) Drain-Source On-State Resistance VGS=-3.3V, ID=-1A 140 170 mΩ
RDS(ON) Drain-Source On-State Resistance VGS=-2.5V, ID=-1A 170 210 mΩ
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Ciss Input Capacitance VDS=-10V, VGS=0V, f=1MHz 177 pF
Coss Output Capacitance 30 pF
Crss Reverse Transfer Capacitance 25 pF
Qg Total Gate Charge VDS=-10V, ID=-2A, VGS=-4.5V 5.3 nC
Qgs Gate Source Charge 0.7 nC
Qgd Gate Drain Charge 1.4 nC
Switching Characteristics
td(on) Turn on Delay Time VDD=-10V, ID=-2A, RG=3.3Ω, VGS=-4.5V 11 ns
tr Turn on Rise Time 32 ns
td(off) Turn Off Delay Time 25 ns
tf Turn Off Fall Time 38 ns
Source Drain Diode Characteristics
ISD Source drain current (Body Diode) TA=25°C -1.2 A
VSD Forward on voltage Tj=25°C, ISD=-1A, VGS=0V² -0.83 -1.2 V

Notes:
¹ Pulse width limited by maximum allowable junction temperature.
² Pulse test ; Pulse width≤300µs, duty cycle≤2%.

Order Information:

Product Package Marking Packing Min Unit Quantity
SI2301S SOT23 A1sHB 3000PCS/Reel 3000PCS

2410121608_BORN-SI2301S_C431492.pdf

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High Speed Line Driver P Channel MOSFET BORN SI2301S Featuring Low Gate Source Voltage Control

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Product Detail
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
2.3A
Operating Temperature - :
-
RDS(on) :
140mΩ@3.3V,1A
Gate Threshold Voltage (Vgs(th)) :
400mV
Reverse Transfer Capacitance (Crss@Vds) :
25pF@10V
Contact Supplier
High Speed Line Driver P Channel MOSFET BORN SI2301S Featuring Low Gate Source Voltage Control

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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