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ASA65R550E N Channel MOSFET transistor featuring low drain source on resistance for power switching
ASA65R550E N Channel MOSFET transistor featuring low drain source on resistance for power switching
Specifications
Drain to Source Voltage :
655V
Current - Continuous Drain(Id) :
8A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
550mΩ
Gate Threshold Voltage (Vgs(th)) :
3.5V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
3.55pF
Output Capacitance(Coss) :
76pF
Input Capacitance(Ciss) :
599pF
Pd - Power Dissipation :
178.1W
Gate Charge(Qg) :
8nC
Description :
8A Through Hole TO-220F
Mfr. Part # :
ASA65R550E
Model Number :
ASA65R550E
Package :
TO-220F
Description

Product Overview

The ASA65R550E, ASU65R550E, and ASD65R550E are N-Channel MOSFET transistors designed for high-efficiency power switching applications. These devices are optimized for boost PFC topologies, LCD & PD adaptors, and LED lighting. Key features include low drain-source on-resistance, easy gate control, and enhanced switching performance. They are suitable for forward or two-ended flyback converters and can be used in TV and LED lighting applications.

Product Attributes

  • Brand: ASA
  • Technology: Silicon
  • Transistor Type: N-Channel
  • Package Types: TO220F, TO251, TO252

Technical Specifications

Model VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Body diode Package Marking
ASA65R550E 550E 0.50 (typ.) 8.0 40 A 50E TO220F ASA65R550E
ASU65R550E 550E 0.50 (typ.) 8.0 40 A 50E TO251 ASU65R550E
ASD65R550E 550E 0.50 (typ.) 8.0 40 A 50E TO252 ASD65R550E
Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.8 - 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 100 nA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) - 0.50 - 0.55 VGS=10V, ID=4A, Tj=25C
Input capacitance Ciss - 599 pF VGS=0V, VDS=50V, f=10kHz
Output capacitance Coss - 76 pF VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance Crss - 3.55 pF VGS=0V, VDS=50V, f=10kHz
Gate to source charge Qgs - 2.6 nC VDD=400V, ID=3A, VGS=0 to 10V
Gate to drain charge Qgd - 1.7 nC VDD=400V, ID=3A, VGS=0 to 10V
Gate charge total Qg - 8.0 nC VDD=400V, ID=3A, VGS=0 to 10V
Gate plateau voltage Vplateau - 6.6 V VDD=400V, ID=3A, VGS=0 to 10V
Diode forward voltage VSD - 0.81 V VGS=0V, IF=3.8 A, Tj=25C
Reverse recovery time trr - 174 ns VR=400V, IF=3 A, diF/dt=100A/s
Reverse recovery charge Qrr - 1200 nC VR=400V, IF=3 A, diF/dt=100A/s
Peak reverse recovery current Irrm - 13.5 A VR=400V, IF=3 A, diF/dt=100A/s
Package Type RthJC (C/W) RthJA (C/W)
TO220 FullPAK 3.65 80
TO251 and TO252 1.06 62

2410121257_ANHI-ASA65R550E_C5440003.pdf

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ASA65R550E N Channel MOSFET transistor featuring low drain source on resistance for power switching

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Product Detail
Drain to Source Voltage :
655V
Current - Continuous Drain(Id) :
8A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
550mΩ
Gate Threshold Voltage (Vgs(th)) :
3.5V
Type :
N-Channel
Contact Supplier
ASA65R550E N Channel MOSFET transistor featuring low drain source on resistance for power switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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