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1200V Silicon Carbide MOSFET Bestirpower BCW120N160W1 with High System Efficiency and Reduced Cooling
1200V Silicon Carbide MOSFET Bestirpower BCW120N160W1 with High System Efficiency and Reduced Cooling
Specifications
Drain to Source Voltage :
1.2kV
Current - Continuous Drain(Id) :
22A
RDS(on) :
160mΩ
Operating Temperature - :
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)) :
3.5V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
8pF
Pd - Power Dissipation :
126W
Output Capacitance(Coss) :
28pF
Input Capacitance(Ciss) :
550pF
Gate Charge(Qg) :
40nC
Description :
N-Channel 1.2kV 22A 126W Through Hole TO-247-3L
Mfr. Part # :
BCW120N160W1
Model Number :
BCW120N160W1
Package :
TO-247-3L
Description

BCW120N160W1 1200V 160m Silicon Carbide Power MOSFET

The BCW120N160W1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power electronic applications. It offers a combination of high blocking voltage, low on-resistance, and high-speed switching capabilities, making it suitable for solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drives, and pulsed power applications. Key benefits include higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide
  • Certifications: Halogen Free, RoHS Compliant
  • Package Type: TO-247-3L

Technical Specifications

Symbol Parameter Test Conditions Value Unit
VDSmax Drain - Source Voltage VGS=0V, ID=100A 1200 V
VGSmax Gate - Source Voltage Absolute maximum values -8 / +22 V
VGSop Gate - Source Voltage Recommended operational values -5 / +18 V
ID Continuous Drain Current VGS=18V, TC=25C 22 A
ID Continuous Drain Current VGS=18V, TC=100C 16 A
IDM Pulse Drain Current Pulse width limited by Tjmax 58 A
TJ, TSTG Operating Junction and Storage Temperature -55 to 175 C
RJC Thermal Resistance, Junction to Case, Max. 1.19 /W
RJA Thermal Resistance, Junction to Ambient, Max. 27.47 /W
Tsold Soldering temperature, wave soldering only allowed at leads 260
BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID=100 A 1200 V
VGS(th) Gate Threshold Voltage VGS = VDS, ID=5.0 mA, TC=25C 2.0 - 4.0 V
VGS(th) Gate Threshold Voltage VGS = VDS, ID=5.0 mA, TC=175C 2.7 V
IDSS Zero Gate Voltage Drain Current VDS = 1200 V, VGS = 0 V 10 - 100 A
IGSS Gate-Source Leakage Current VGS = 18 V, VDS = 0 V 10 - 200 nA
RDS(on) Static Drain to Source On Resistance VGS = 18 V, ID = 10 A, TC = 25C 125 - 180 m
RDS(on) Static Drain to Source On Resistance VGS = 15 V, ID = 10 A, TC = 25C 160 - 190 m
RDS(on) Static Drain to Source On Resistance VGS = 18 V, ID = 10 A, TC = 175C 220 m
gfs Transconductance VGS = 18 V, ID = 10 A, TJ = 25C 7.0 S
gfs Transconductance VGS = 18 V, ID = 10 A, TJ = 175C 6.0 S
Ciss Input Capacitance VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV 550 pF
Coss Output Capacitance 28 pF
Crss Reverse Transfer Capacitance 8 pF
VSD Diode Forward Voltage VGS = -5 V, ISD = 5 A, TJ = 25C 3.5 V
VSD Diode Forward Voltage VGS = -5 V, ISD = 5 A, TJ = 175C 3.2 V
IS Continuous Diode Forward Current TC = 25 30 A
trr Reverse Recovery time VGS = -5V, ISD = 10 A, VR= 800V, dif / dt=1200A/s 10 ns
Qrr Reverse Recovery Charge 40 nC
Irrm Peak Reverse Recovery Current 3 A
EON Turn-On Switching Energy VDS=800V, VGS= -5/18V, ID= 10A, RG(ext) = 0, L= 256H 200 J
EOFF Turn-Off Switching Energy VDS=800V, VGS= -5/18V, ID= 10A, RG(ext) = 0 50 J
td(on) Turn-On Delay Time VDS=800V, VGS= -5/18V, ID= 100A, RG(ext) = 0, Timing relative to VDS 20 ns
tr Rise Time 45 ns
td(off) Turn-Off Delay Time 20 ns
tf Fall Time 15 ns
RG(int) Internal Gate Resistance f= 1 MHz, VAC=25mV 10.0
Qgs Gate to Source Charge VDD=800V, VGS= -5/18V, ID= 10A 11 nC
Qgd Gate to Drain Charge 8 nC
Qg Total Gate Charge 40 nC

Package Outlines

TO247-3L

Package Marking and Ordering Information

Part Number Top Marking Package Packing Method Quantity
BCW120N160W1 BCW120N160W1 TO247-3L Tube 30 units

2507111721_Bestirpower-BCW120N160W1_C42401700.pdf

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1200V Silicon Carbide MOSFET Bestirpower BCW120N160W1 with High System Efficiency and Reduced Cooling

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Product Detail
Drain to Source Voltage :
1.2kV
Current - Continuous Drain(Id) :
22A
RDS(on) :
160mΩ
Operating Temperature - :
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)) :
3.5V
Type :
N-Channel
Contact Supplier
1200V Silicon Carbide MOSFET Bestirpower BCW120N160W1 with High System Efficiency and Reduced Cooling

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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