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Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications
Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications
Specifications
Drain to Source Voltage :
700V
Current - Continuous Drain(Id) :
11A
RDS(on) :
350mΩ
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3.5V
Reverse Transfer Capacitance (Crss@Vds) :
5.3pF@50V
Number :
1 N-channel
Input Capacitance(Ciss) :
901pF@50V
Pd - Power Dissipation :
83W
Gate Charge(Qg) :
-
Description :
N-Channel 700V 11A 83W Surface Mount TO-252
Mfr. Part # :
ASD65R350E
Model Number :
ASD65R350E
Package :
TO-252
Description

Product Overview

The ASA MO 1. 2. 3. A65R350 OSFET is a N-Channel MOSFET designed for Power Factor Correction (PFC) and hard switching applications. It is suitable for use in PC power supplies, LCD Adaptors, lighting, servers, and telecom power applications. Key features include low drain-source on-resistance and easy gate switching control. This device offers enhanced performance in hard switching and resonant mode applications.

Product Attributes

  • Brand: ASA
  • Series: MO 1. 2. 3. A65R350
  • Channel Type: N-Channel
  • Technology: Silic Applicatio

Technical Specifications

Part Name Package VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Body diode dv/dt Vt Marking
ASA65R350E TO220F 700 V 350 m 10.7 nC 55 A 2.8 V 11 V/ns 4.2 V ASA65R350E
ASU65R350E TO251 700 V 350 m 10.7 nC 55 A 2.8 V 11 V/ns 4.2 V ASU65R350E
ASD65R350E TO252 700 V 350 m 10.7 nC 55 A 2.8 V 11 V/ns 4.2 V ASD65R350E
Parameter Symbol Values Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.8 - 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 100 nA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 0.318 - 0.35 VGS=10V, ID=5.5A, Tj=25C
Gate resistance (Intrinsic) RG 11 - f=1MHz, open drain
Input capacitance Ciss 901 pF VGS=0V, VDS=50V, f=10kHz
Output capacitance Coss 59 pF VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance Crss 5.3 pF VGS=0V, VDS=50V, f=10kHz
Turn-on delay time td(on) 27 ns VDD=400V, ID=5.6A,RG=10
Rise time tr 31 ns VDD=400V, ID=5.6A,RG=10
Turn-off delay time td(off) 41 ns VDD=400V, ID=5.6A,RG=10
Fall time tf 29 ns VDD=400V, ID=5.6A,RG=10
Gate to source charge Qgs 5.8 nC VDD=400V, ID=5.6A, VGS=13V
Gate to drain charge Qgd 17 nC VDD=400V, ID=5.6A, VGS=13V
Gate charge total Qg 22 nC VDD=400V, ID=5.6A, VGS=13V
Gate plateau voltage Vplateau 5.3 V VDD=400V, ID=5.6A, VGS=13V
Diode forward voltage VSD 0.74 V VGS=0V, IF=1 A, Tj=25C
Reverse recovery time trr 250 ns VR=400V, IF=5.6 A, diF/dt=100A/s
Reverse recovery charge Qrr 2572 nC VR=400V, IF=5.6 A, diF/dt=100A/s
Peak reverse recovery current Irrm 19.6 A VR=400V, IF=5.6 A, diF/dt=100A/s
Continuous drain current ID - 11 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse - 55 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - 624 mJ
MOSFET dv/dt ruggedness dv/dt - 11 V/ns VDS=0...150V
Gate source voltage (static) VGS -20 - 20 V static
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (TO220F) Ptot - 31 W TC=25C
Power dissipation (TO251,TO252) Ptot - 83 W TC=25C
Storage temperature Tstg -55 - 150 C
Operating junction temperature Tj -55 - 150 C
Continuous diode forward current IS - 48 A TC=25C
Diode pulse current IS,pulse - 151 A TC=25C
Reverse diode dv/dt dv/dt - 15 V/ns VDS=0...400V, ISD<=48A, Tj=25C
Maximum diode commutation speed diF/dt - 50 A/us VDS=0...400V, ISD<=48A, Tj=25C
Insulation withstand voltage VISO n.a. V Vrms, TC=25C, t=1min
Thermal characteristics (TO220 FullPAK) Parameter Symbol Values Unit Note / Test Condition
Thermal resistance, junction - case RthJC - 4.0 C/W
Thermal resistance, junction - ambient RthJA - 80 C/W device on PCB, minimal footprint
Thermal characteristics (TO251 and TO252) Parameter Symbol Values Unit Note / Test Condition
Thermal resistance, junction - case RthJC - 1.5 C/W
Thermal resistance, junction - ambient RthJA - 62 C/W device on PCB, minimal footprint

2410121538_ANHI-ASD65R350E_C5440010.pdf

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Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications

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Product Detail
Drain to Source Voltage :
700V
Current - Continuous Drain(Id) :
11A
RDS(on) :
350mΩ
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3.5V
Reverse Transfer Capacitance (Crss@Vds) :
5.3pF@50V
Contact Supplier
Low Gate Charge N Channel MOSFET ANHI ASD65R350E Designed for PC Power Supplies and Telecom Power Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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