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850V NChannel depletion mode MOSFET ARK micro DMS8515E designed for operation in various electronic circuits
850V NChannel depletion mode MOSFET ARK micro DMS8515E designed for operation in various electronic circuits
Specifications
Drain to Source Voltage :
850V
Current - Continuous Drain(Id) :
200mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
30Ω@0V
Gate Threshold Voltage (Vgs(th)) :
4V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
4.1pF
Output Capacitance(Coss) :
20.7pF
Pd - Power Dissipation :
1.5W
Input Capacitance(Ciss) :
393.4pF
Gate Charge(Qg) :
13.6nC
Description :
N-Channel 850V 0.2A 1.5W Surface Mount SOT-223
Mfr. Part # :
DMS8515E
Model Number :
DMS8515E
Package :
SOT-223
Description

DMS8515E 850V N-Channel Depletion-Mode Power MOSFET

The DMS8515E is an 850V N-Channel Depletion-Mode Power MOSFET designed for various applications requiring high breakdown voltage and fast switching speeds. It features a depletion mode (normally on) operation, ESD improved capability, and a rugged polysilicon gate cell structure built with proprietary advanced planar technology. This MOSFET is suitable for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Certifications: RoHS Compliant, Halogen-free Available

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Conditions
Drain-to-Source Breakdown VoltageBVDSX850----VVGS=-10V, ID=250A
Continuous Drain CurrentID----0.2ATA=25
Pulsed Drain CurrentIDM----0.8ATA=25
Power DissipationPD----1.5WTA=25
Gate-to-Source VoltageVGS----20VTA=25
Drain-to-Source Leakage CurrentID(OFF)----10AVDS=850V, VGS=-10V
Gate-to-Source Leakage CurrentIGSS----20AVGS=20V, VDS=0V
Saturated Drain-to-Source CurrentIDSS200----mAVGS=0V, VDS=50V
Static Drain-to-Source On-ResistanceRDS(ON)--1530VGS=0V, ID=200mA
Gate-to-Source Cut-off VoltageVGS(OFF)-4.0---1.5VVDS=3V, ID=8A
Forward Transconductancegfs--720--mSVDS=20V, ID=200mA
Input CapacitanceCiss--393.4--pFVGS=-10V, VDS=50V, f=1.0MHz
Output CapacitanceCoss--20.7--pFVGS=-10V, VDS=50V, f=1.0MHz
Reverse Transfer CapacitanceCrss--4.1--pFVGS=-10V, VDS=50V, f=1.0MHz
Total Gate ChargeQg--13.6--nCVGS=-10V~10V, VDS=150V, ID=200mA
Gate-to-Source ChargeQgs--4.0--nCVGS=-10V~10V, VDS=150V, ID=200mA
Gate-to-Drain (Miller) ChargeQgd--3.6--nCVGS=-10V~10V, VDS=150V, ID=200mA
Turn-on Delay Timetd(on)--18.1--nsVGS=-10V~0V, VDD=150V, ID=200mA, RG=10
Rise Timetrise--10.5--nsVGS=-10V~0V, VDD=150V, ID=200mA, RG=10
Turn-off Delay Timetd(off)--35.6--nsVGS=-10V~0V, VDD=150V, ID=200mA, RG=10
Fall Timetfall--94.0--nsVGS=-10V~0V, VDD=150V, ID=200mA, RG=10
Diode Forward VoltageVSD----1.2VISD=200mA, VGS=-10V
Thermal Resistance, Junction-to-CaseRJC--83--/W--

2410121522_ARK-micro-DMS8515E_C22371817.pdf

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850V NChannel depletion mode MOSFET ARK micro DMS8515E designed for operation in various electronic circuits

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Product Detail
Drain to Source Voltage :
850V
Current - Continuous Drain(Id) :
200mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
30Ω@0V
Gate Threshold Voltage (Vgs(th)) :
4V
Type :
N-Channel
Contact Supplier
850V NChannel depletion mode MOSFET ARK micro DMS8515E designed for operation in various electronic circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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