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Enhanced MOSFET BL BL3N150-B with low gate to source voltage and high frequency switching capability
Enhanced MOSFET BL BL3N150-B with low gate to source voltage and high frequency switching capability
Specifications
Drain to Source Voltage :
1.5kV
Current - Continuous Drain(Id) :
3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
5.8Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)) :
5V
Reverse Transfer Capacitance (Crss@Vds) :
4.7pF@25V
Number :
1 N-channel
Input Capacitance(Ciss) :
1.45nF@25V
Pd - Power Dissipation :
140W
Gate Charge(Qg) :
36nC@10V
Description :
N-Channel 1.5kV 3A 140W Surface Mount TO-263
Mfr. Part # :
BL3N150-B
Model Number :
BL3N150-B
Package :
TO-263
Description

Product Overview

The BL3N150 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. Key features include fast switching, low Crss, 100% avalanche testing, and improved dv/dt capability, making it a robust choice for demanding applications. This RoHS-compliant product is available in various package types to suit different design requirements.

Product Attributes

  • Brand: Belling
  • Product Type: Power MOSFET
  • Channel Type: N-channel
  • Technology: Enhanced MOSFET
  • Certifications: RoHS

Technical Specifications

Parameter Value Unit Notes
Drain-to-Source Voltage (VDS) 1500 V
Continuous Drain Current (ID) 3 A
Continuous Drain Current (ID) at TC = 100 C 1.7 A
Pulsed Drain Current (IDM) 12 A Pulse width limited by maximum junction temperature
Gate-to-Source Voltage (VGS) ±30 V
Single Pulse Avalanche Energy (EAS) 450 mJ IDS=2.5A, VDD=50V, Start TJ=25
Peak Diode Recovery dv/dt 5.0 V/ns ISD =3A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25
Power Dissipation (PD) - TO-220, TO-3PN, TO-247, TO-263 140 W
Derating Factor above 25C (for TO-220, TO-3PN, TO-247, TO-263) 1.1 W/
Power Dissipation (PD) - TO-220F, TO-3PF 62.5 W
Derating Factor above 25C (for TO-220F, TO-3PF) 0.5 W/
Operating Junction and Storage Temperature Range (TJ, Tstg) -55 to 150
Maximum Temperature for Soldering (TL) 300
Junction-to-Case Thermal Resistance (RJC) - No FullPAK 0.89 /W
Junction-to-Ambient Thermal Resistance (RJA) - No FullPAK 62.5 /W
Junction-to-Case Thermal Resistance (RJC) - FullPAK 2 /W
Junction-to-Ambient Thermal Resistance (RJA) - FullPAK 62.5 /W
Drain to Source Breakdown Voltage (VDS) 1500 V VGS=0V, ID=250µA
Drain to Source Leakage Current (IDSS) at VDS =1500V, VGS= 0V, Tj = 25 -- µA Max: 10
Drain to Source Leakage Current (IDSS) at VDS =1200V, VGS= 0V, Tj = 125 -- µA Max: 500
Gate to Source Forward Leakage (IGSS(F)) at VGS =+30V -- nA Max: 100
Gate to Source Reverse Leakage (IGSS(R)) at VGS =-30V -- nA Max: 100
Drain-to-Source On-Resistance (RDS(ON)) 5.8 Ω VGS=10V, ID=1.5A, Typ. (Max: 8)
Gate Threshold Voltage (VGS(TH)) 3.0 V VDS = VGS, ID = 250µA, Min. (Max: 5.0)
Gate resistance (Rg) 3 Ω f = 1.0MHz, Typ.
Input Capacitance (Ciss) 1450 PF VGS = 0V, VDS = 25V, f = 1.0MHz, Typ.
Output Capacitance (Coss) 87.5 PF Typ.
Reverse Transfer Capacitance (Crss) 4.7 PF Typ.
Turn-on Delay Time (td(ON)) 25 ns ID =1.25A, VDD = 750V, VGS = 10V, RG =5Ω, Typ.
Rise Time (tr) 46 ns Typ.
Turn-Off Delay Time (td(OFF)) 45 ns Typ.
Fall Time (tf) 60 ns Typ.
Total Gate Charge (Qg) 36 nC ID =3A, VDD =1000V, VGS = 10V, Typ.
Gate to Source Charge (Qgs) 11 nC Typ.
Gate to Drain (Miller)Charge (Qgd) 14 nC Typ.
Continuous Source Current (Body Diode) (IS) 3 A TC=25 °C
Maximum Pulsed Current (Body Diode) (ISM) 12 A
Diode Forward Voltage (VSD) 1.2 V IS=3A, VGS=0V, Typ.
Reverse Recovery Time (Trr) 405 ns IS=2.5A, Tj = 25°C, dIF/dt=100A/us, VGS=0V, Typ.
Reverse Recovery Charge (Qrr) 2400 nC Typ.
Reverse Recovery Current (Irrm) 11.8 A Typ.

Available Packages

Ordering Code Package Type Packing
BL3N150-P TO-220 Tube
BL3N150-A TO-220F Tube
BL3N150-W TO-3PN Tube
BL3N150-K TO-3PF Tube
BL3N150-F TO-247 Tube
BL3N150-B TO-263 Reel

Package Dimensions (mm)

TO-220F Package

ItemMINMAX
A9.6010.40
B15.4016.20
B18.909.50
C4.304.90
C12.103.00
D2.403.00
E0.601.00
F0.300.60
G1.121.42
H3.403.80
I1.602.90
L12.0014.00
N2.342.74
Q3.153.55
P2.903.30

TO-220 Package

ItemMINMAX
A9.6010.60
B15.0016.00
B18.909.50
C4.304.80
C12.303.10
D1.201.40
E0.700.90
F0.300.60
G1.171.37
H2.703.80
L12.6014.80
N2.342.74
Q2.403.00
P3.503.90

TO-3PN Package

ItemMINMAX
A15.0016.00
B19.2020.60
C4.605.00
D1.401.60
E0.901.10
F0.500.70
G12.002.20
G23.003.20
H3.003.70
I1.201.70
J2.702.90
L19.0021.00
N5.255.65
P3.103.30

TO-3PF Package

ItemMINMAX
A4.605.20
A12.202.60
B0.901.40
B11.752.35
B21.752.15
B32.803.35
B42.803.15
C0.500.70
D20.6021.30
D116.0018.00
E15.5016.10
E113.0014.70
E23.805.30
E30.802.60
e5.205.70
L19.0020.50
L13.904.60
ΦP3.303.70
Q5.206.00
S5.806.60

TO-247 Package

ItemMINMAX
A19.7020.10
B15.3515.75
C5.305.70
D20.8021.20
E5.806.20
e5.445.50
F1.201.40
G1.001.40
H21.7022.10
I4.905.30
J2.402.80
K15.0015.40
L2.202.60
M2.803.20
N1.602.00
O0.400.60
P3.604.00
Q5.706.10
R15.7016.10
S6.006.40
T4.504.90
U2.603.00
V0.200.60

TO-263 Package

ItemMINMAX
A9.8010.40
B8.909.50
B10.000.10
C4.404.80
D1.161.37
E0.700.95
F0.300.60
G1.071.47
H1.301.80
K0.951.37
L114.5016.50
L21.602.30
I0.000.20
Q0°8°
R0.40
N2.392.69

Note: Exceeding the maximum ratings of the device may cause damage or permanent failure. Always ensure circuit designs do not exceed the absolute maximum ratings.


2410121247_BL-BL3N150-B_C7436531.pdf

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Enhanced MOSFET BL BL3N150-B with low gate to source voltage and high frequency switching capability

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Product Detail
Drain to Source Voltage :
1.5kV
Current - Continuous Drain(Id) :
3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
5.8Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)) :
5V
Reverse Transfer Capacitance (Crss@Vds) :
4.7pF@25V
Contact Supplier
Enhanced MOSFET BL BL3N150-B with low gate to source voltage and high frequency switching capability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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