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ASDsemi ASDM30N90Q R 30 Volt N Channel MOSFET Suitable for Power Management and PWM Control Circuits
ASDsemi ASDM30N90Q R 30 Volt N Channel MOSFET Suitable for Power Management and PWM Control Circuits
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
90A
RDS(on) :
5.2mΩ@10V
Operating Temperature - :
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)) :
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds) :
253pF@15V
Input Capacitance(Ciss) :
2.12nF
Pd - Power Dissipation :
65W
Gate Charge(Qg) :
40nC@10V
Description :
30V 90A 65W Surface Mount DFN5x6-8
Mfr. Part # :
ASDM30N90Q-R
Model Number :
ASDM30N90Q-R
Package :
DFN5x6-8
Description

Product Overview

The ASDM30N90Q is a 30V N-Channel MOSFET featuring advanced trench technology and low gate charge. It offers excellent RDS(ON) and high power and current handling capabilities, making it suitable for load switch, PWM applications, and power management scenarios. This MOSFET provides a low gate charge and is designed for efficient power conversion.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Line: ASDM
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel
  • Package Type: DFN5*6-8
  • Date of Creation: FEB 2019
  • Version: 1.0

Technical Specifications

Parameter Symbol Conditions Minimum Typical Maximum Units
Product Summary
Drain-Source Voltage VDS 30 V
RDS(on), Typ. @ VGS=10V RDS(on) VGS=10V 4.3 m
Continuous Drain Current ID TC =25C 90 A
Continuous Drain Current ID TC =100C 40 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (TA =25C unless otherwise noted) 30 V
Gate-Source Voltage VGS (TA =25C unless otherwise noted) 20 V
Continuous Drain Current ID TC =25C 90 A
Continuous Drain Current ID TC =100C 40 A
Pulsed Drain Current IDM 360 A
Avalanche Current IS 90 A
Single Pulse Avalanche Energy EAS L =0.3mH 135 mJ
Power Dissipation PD TC =25C 65 W
Power Dissipation PD TC =100C 32 W
Junction and Storage Temperature Range TJ, TSTG -55 175 C
Thermal Characteristics
Maximum Junction-to-Case Steady-State RJC 2.3 C/W
Maximum Junction-to-Ambient Steady-State RJA 62 C/W
Electrical Characteristics (TJ =25C unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS ID =250A,VGS =0V 30 -- -- V
Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V, TJ =25C -- -- 1 A
Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V, TJ =125C -- -- 25 A
Gate-Body Leakage Current IGSS VDS =0V, VGS =20V -- -- 100 nA
Gate Threshold Voltage VGS(th) VDS =VGS, ID =250A 1 1.6 2.4 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =30A -- 4.3 5.2 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =30A -- 6.9 9.0 m
Forward Transconductance gFS VDS =10V, ID =20A 16 -- -- S
Diode Forward Voltage VSD IS =30A, VGS =0V -- -- 1 V
Maximum Body-Diode Continuous Current IS -- -- 90 A
Dynamic Parameters
Input Capacitance Ciss VGS =0V, VDS =15V, f =1MHz -- 2120 -- pF
Output Capacitance Coss VGS =0V, VDS =15V, f =1MHz -- 307 -- pF
Reverse Transfer Capacitance Crss VGS =0V, VDS =15V, f =1MHz -- 253 -- pF
Switching Parameters
Total Gate Charge Qg VGS =10V,VDS =15V, ID =30A -- 40 -- nC
Gate Source Charge Qgs VGS =10V,VDS =15V, ID =30A -- 5.4 -- nC
Gate Drain Charge Qgd VGS =10V,VDS =15V, ID =30A -- 9.6 -- nC
Turn-On Delay Time tD(on) VGS =10V,VDS =15V, ID =20A, RG =3 -- 15 -- ns
Turn-On Rise Time tr VGS =10V,VDS =15V, ID =20A, RG =3 -- 32 -- ns
Turn-Off Delay Time tD(off) VGS =10V,VDS =15V, ID =20A, RG =3 -- 15 -- ns
Turn-Off Fall Time tf VGS =10V,VDS =15V, ID =20A, RG =3 -- 12 -- ns
Body Diode Reverse Recovery Time trr IF =30A, di/dt =100A/s -- 23 -- ns
Body Diode Reverse Recovery Charge Qrr IF =30A, di/dt =100A/s -- 48 -- nC
Ordering and Marking Information
Device No. ASDM30N90Q-R
Marking 30N90
Package DFN5*6-8
Packing Quantity 4000/Reel

2411220106_ASDsemi-ASDM30N90Q-R_C2972890.pdf

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ASDsemi ASDM30N90Q R 30 Volt N Channel MOSFET Suitable for Power Management and PWM Control Circuits

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
90A
RDS(on) :
5.2mΩ@10V
Operating Temperature - :
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)) :
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds) :
253pF@15V
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ASDsemi ASDM30N90Q R 30 Volt N Channel MOSFET Suitable for Power Management and PWM Control Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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