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ASW60R090EFD N Channel Enhancement Mode MOSFET Ideal for Phase Shift Bridge LLC Resonant Topologies
ASW60R090EFD N Channel Enhancement Mode MOSFET Ideal for Phase Shift Bridge LLC Resonant Topologies
Specifications
Drain to Source Voltage :
650V
Current - Continuous Drain(Id) :
47A
RDS(on) :
90mΩ
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3V
Reverse Transfer Capacitance (Crss@Vds) :
4.6pF@50V
Number :
1 N-channel
Input Capacitance(Ciss) :
4.799nF@50V
Pd - Power Dissipation :
391W
Gate Charge(Qg) :
65nC
Description :
N-Channel 650V 47A 391W Through Hole TO-247
Mfr. Part # :
ASW60R090EFD
Model Number :
ASW60R090EFD
Package :
TO-247
Description

Product Overview

The ASA60R090EFD and ASW60R090EFD are N-Channel Silicon MOSFETs designed for soft-switching applications. They are ideal for Boost PFC, Half-Bridge, Full-Bridge, Phase-Shift-Bridge (ZVS), and LLC resonant topologies. These MOSFETs are suitable for use in Telecom Power, EV Charging, Solar Inverters, and Application Servers. Key features include low drain-source on-resistance (RDS(on)) and easy gate switching control, with a typical RDS(on) of 0.080 and a threshold voltage (Vth) between 3 to 5V. They are available in TO220F and TO247 packages.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Channel Type: N-Channel
  • Mode: Enhancement mode
  • Packaging: TO220F, TO247

Technical Specifications

Model Part Name VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Body diode dv/dt (V/ns)
MOSFET ASA60R090EFD 650 90 65 141 50
MOSFET ASW60R090EFD 650 90 65 141 50
Parameter Symbol Unit Value (Min) Value (Typ) Value (Max) Note / Test Condition
Maximum Ratings Continuous drain current ID - - 47 A (TC=25C, Limited by Tj,max, D = 0.50)
Pulsed drain current ID,pulse - - 141 A (TC=25C, Pulse width tp limited by Tj,max)
Avalanche energy, single pulse EAS - - 5336 mJ
MOSFET dv/dt ruggedness dv/dt - - 59 V/ns (VDS=0...400V)
Gate source voltage (static) VGS - -20 20 V
Gate source voltage (dynamic) VGS - -30 30 V (AC, f>1 Hz)
Power dissipation (TO220F) Ptot - - 34 W (TC=25C)
Power dissipation (TO247) Ptot - - 391 W (TC=25C)
Storage temperature Tstg -55 - 150 C
Operating junction temperature Tj -55 - 150 C
Reverse diode dv/dt dv/dt - - 50 V/ns (VDS=0...400V, ISD<=48A, Tj=25C)
Thermal Characteristics (TO220F) Thermal resistance, junction - case RthJC - - 3.65 C/W
Thermal resistance, junction - ambient RthJA - - 80 C/W (device on PCB, minimal footprint)
Thermal Characteristics (TO247) Thermal resistance, junction - case RthJC - - 0.32 C/W
Thermal resistance, junction - ambient RthJA - - 62 C/W (device on PCB, minimal footprint)
Static Characteristics Drain-source breakdown voltage V(BR)DSS 605 - - V (VGS=0V, ID=10mA)
Gate threshold voltage V(GS)th 3 - 5 V (VDS=VGS, ID=250uA)
Zero gate voltage drain current IDSS - - 5 uA (VDS=600V, VGS=0V, Tj=25C)
Gate-source leakage current IGSS - - 100 nA (VGS=30V, VDS=0V)
Drain-source on-state resistance RDS(on) - 0.080 0.090 (VGS=10V, ID=20A, Tj=25C)
Gate resistance (Intrinsic) RG - 14 - (f=1MHz, open drain)
Dynamic Characteristics Input capacitance Ciss - 4799 - pF (VGS=0V, VDS=50V, f=10kHz)
Output capacitance Coss - 482 - pF (VGS=0V, VDS=50V, f=10kHz)
Reverse transfer capacitance Crss - 4.6 - pF (VGS=0V, VDS=50V, f=10kHz)
Turn-on delay time td(on) - 38.8 - ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7)
Rise time tr - 26.8 - ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7)
Dynamic Characteristics (cont.) Turn-off delay time td(off) - 134.8 - ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7)
Fall time tf - 20 - ns (VDD=400V,VGS=13V,ID=25.8A, RG=1.7)
Gate Charge Characteristics Gate to source charge Qgs - 20 - nC (VDD=400V, ID=25.8A, VGS=0 to 10V)
Gate to drain charge Qgd - 24 - nC (VDD=400V, ID=25.8A, VGS=0 to 10V)
Gate charge total Qg - 65 - nC (VDD=400V, ID=25.8A, VGS=0 to 10V)
Gate plateau voltage Vplateau - 7.4 - V (VDD=400V, ID=25.8A, VGS=0 to 10V)
Reverse Diode Characteristics Diode forward voltage VSD - 0.66 - V (VGS=0V, IF=1A, Tj=25C)
Reverse recovery time trr - 120.8 - ns (Vr=400v,IF=9.6A,di/dt=100A/us)
Reverse recovery charge Qrr - 0.7 - uC (Vr=400v,IF=9.6A,di/dt=100A/us)
Peak reverse recovery current Irrm - 11.3 - A (Vr=400v,IF=9.6A,di/dt=100A/us)

2410121609_ANHI-ASW60R090EFD_C5440016.pdf

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ASW60R090EFD N Channel Enhancement Mode MOSFET Ideal for Phase Shift Bridge LLC Resonant Topologies

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Product Detail
Drain to Source Voltage :
650V
Current - Continuous Drain(Id) :
47A
RDS(on) :
90mΩ
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3V
Reverse Transfer Capacitance (Crss@Vds) :
4.6pF@50V
Contact Supplier
ASW60R090EFD N Channel Enhancement Mode MOSFET Ideal for Phase Shift Bridge LLC Resonant Topologies

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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