Atomic Layer Deposition in Catalyst Industry


Applications

Working Principle
Atomic layer deposition (ALD) technology, also known as atomic layer epitaxy (ALE) technology, is a chemical
vapor film deposition technology based on ordered and surface self-saturated reaction. ALD is applied in
semiconductor field. As Moore’s Law evolves constantly and the feature sizes and etching grooves of integrated
circuits have been constantly miniaturizing, the smaller and smaller etching grooves have been bringing severe
challenges to the coating technology of grooves and their side walls. Traditional PVD and CVD process have been
unable to meet the requirements of superior step coverage under narrow line-width. ALD technology is playing an
increasingly important role in semiconductor industry due to its excellent shape-keeping, uniformity and higher step
coverage.

Features

Coating Samples

Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
completed, then take out the substrate after the vacuum breaking conditions are met.

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