| Series | DDR5 SODIMM Series | |||||||||||
| Brand | TCSUNBOW | |||||||||||
| Capacity | 8GB | 16GB | 32GB | |||||||||
| Model Number | DDR5-NB-8GB | DDR5-NB-16GB | DDR5-NB-32GB | |||||||||
| EAN | 6935515104186 | 6935515104193 | 6935515140474 | 6935515140481 | 6935515104209 | 6935515104216 | 6935515104223 | 6935515104230 | 6935515104247 | 6935515104254 | 6935515104261 | 6935515104278 |
| Memory Speed / Frequency | 4800MHz | 5600MHz | 6000MHZ | 6400MHZ | 4800MHz | 5600MHz | 6000MHZ | 6400MHZ | 4800MHz | 5600MHz | 6000MHz | 6400MHz |
| Rank (1Rx8/2Rx8/8Rx4) | 1Rx8 | 1Rx8 | 2Rx8 | 2Rx8 | 1Rx8 | 1Rx8 | 2Rx8 | 2Rx8 | 2Rx8 | 2Rx8 | 2Rx8 | 2Rx8 |
| CAS Latency | CL40-40-40-77 | CL46-45-45-90 | CL46-48-48-96 | CL32-39-39-80 | CL40-40-40-77 | CL46-45-45-90 | CL46-48-48-96 | CL32-39-39-80 | CL40-40-40-77 | CL46-45-45-90 | CL46-48-48-96 | CL32-39-39-80 |
| Operating Voltage | 1.1V | 1.1V | 1.35V | 1.4V | 1.1V | 1.1V | 1.35V | 1.4V | 1.1V | 1.1V | 1.35V | 1.1V |
| No. of Memory IC | 8/16 | |||||||||||
| Power Consumption | 3W | |||||||||||
| Controller IC | NO | |||||||||||
| Overclock Support (YES / NO) | NO | |||||||||||
| ECC (Error Correction Code) (YES/NO) | NO | |||||||||||
| Net Weight (g) | 10g | |||||||||||
| Gross Weight (g) | 28g | |||||||||||
| Pin Count | 260 | |||||||||||
| OEM/ODM Support | YES | |||||||||||
| Heat Sink / Heat Spreader | NO | |||||||||||
| Form Factor | SODIMM | |||||||||||
| Computer Memory Type (DRAM/SDRAM) | DRAM | |||||||||||
| Operating Temperature | 0-70℃ | |||||||||||
| Storage Temperature | -40~85℃ | |||||||||||
| Warranty | 3 Years | |||||||||||
| No. of Memory Channels (Single/Dual) | (Single/Dual) | |||||||||||
| Product Dimension (W x D x H) in mm | 70x30x3.5mm | |||||||||||
| Buffered / Un-buffered Memory | Un-buffered Memory | |||||||||||
| Memory IC Brand | Micron/Samsung/Sk Hynix | |||||||||||
| Note: All specifications and performance data are for reference purposes only. Actual results may vary depending on platform and system configuration. TCSUNBOW/TCS reserves the right of final interpretation. | ||||||||||||