The 2SB772D is a Silicon PNP transistor housed in a TO-252 plastic package. It features low saturation voltage, excellent hFE linearity, and high hFE. This transistor is designed for applications such as the output stage of 3-watt audio amplifiers, voltage regulators, DC-DC converters, and relay drivers.
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector to Base Voltage | VCBO | -40 | V |
| Collector to Emitter Voltage | VCEO | -30 | V |
| Emitter to Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -3.0 | A |
| Collector Power Dissipation | PC | 1.0 | W |
| Collector Power Dissipation (TC=25) | PC(TC=25 ) | 10 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector to Base Breakdown Voltage | VCBO | IC=-100A, IE=0 | -40 | V | ||
| Collector to Emitter Breakdown Voltage | VCEO | IC=-1mA, IB=0 | -30 | V | ||
| Emitter to Base Breakdown Voltage | VEBO | IE=-10A, IC=0 | -5.0 | V | ||
| Collector Cut-Off Current | ICBO | VCB=-30V, IE=0 | -1.0 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=-3.0V, IC=0 | -1.0 | A | ||
| DC Current Gain | hFE(1) | VCE=-2.0V, IC=-1.0A | 60 | 400 | ||
| DC Current Gain | hFE(2) | VCE=-2.0V, IC=-20mA | 30 | 220 | ||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-2.0A, IB=-0.2A | -0.3 | -0.5 | V | |
| Base to Emitter Saturation Voltage | VBE(sat) | IC=-2.0A, IB=-0.2A | -1.0 | -2.0 | V | |
| Transition Frequency | fT | IC=-1.0A, VCE=-5.0V | 80 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1.0MHz | 55 | pF |
Marking Instructions:
Packaging Specifications:
Temperature Profile for IR Reflow Soldering (Pb-Free):
Resistance to Soldering Heat Test Conditions: