Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
300MHz
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Description :
300mW 100mA 45V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # :
BC850B
Model Number :
BC850B
Package :
SOT-23
Description

Product Overview

The BC850 is an NPN bipolar transistor designed for automatic insertion, making it ideal for high-volume manufacturing. It is well-suited for switching and AF amplifier applications. This surface mount device comes in a SOT-23 package.

Product Attributes

  • Complementary to BC860
  • Case Material: Molded Plastic
  • UL flammability Classification Rating: 94V-0
  • Weight: 0.008 grams (approximate)
  • Marking: 2F (BC850B), 2G (BC850C)

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO5V
Collector CurrentIC100mA
Collector Power DissipationPD300mW
Thermal Resistance Junction To AmbientRJA417C/W
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO50VIC=10uAIE=0
Collector-emitter breakdown voltageV(BR)CEO45VIC=10mAIB=0
Emitter-base breakdown voltageV(BR)EBO5VIE=10uAIC=0
Collector cut-off currentICBO15nAVCB=30V, IE=0
DC current gainhFE1200-800VCE=5V, IC=2mA
Collector-emitter saturation voltageVCE(sat)0.09 - 0.25VIC=10mAIB=0.5mA
Collector-emitter saturation voltageVCE(sat)0.2 - 0.6VIC=100mAIB=5mA
Base-emitter saturation voltageVBE(sat)0.7VIC=10mAIB=0.5mA
Base-emitter saturation voltageVBE(sat)0.9VIC=100mAIB=5mA
Base-emitter voltageVBE(ON)0.58 - 0.7VVCE=5V,IC=2mA
Base-emitter voltageVBE(ON)0.77VVCE=5V,IC=10mA
Transition frequencyfT300MHzVCE=5V,IC=10mA,f=100MHz
Collector output capacitanceCob2.5 - 4.5pFVCE=10V, IE=0, f=1MHz
Noise FigureNF1.0dBIC=0.2mA,VCE=5.0V Rg=10k,f=1.0kHz
hFE RankBC850BRange 110-220
hFE RankBC850CRange 420-800

2507111630_Guangdong-Hottech-BC850B_C49238160.pdf

Send your message to this supplier
Send Now

SOT23 Package NPN Bipolar Transistor Guangdong Hottech BC850B Designed for Automatic Insertion and Amplifier

Ask Latest Price
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
300MHz
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Contact Supplier
SOT23 Package NPN Bipolar Transistor Guangdong Hottech BC850B Designed for Automatic Insertion and Amplifier

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement