Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
5uA
Pd - Power Dissipation :
150W
Transition frequency(fT) :
30MHz
type :
PNP
Current - Collector(Ic) :
15A
Collector - Emitter Voltage VCEO :
360V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor PNP 360V 15A Through Hole TO-3PH
Mfr. Part # :
NJW0302GC
Model Number :
NJW0302GC
Package :
TO-3PH
Description

Product Overview

The NJW0302GC is a Silicon PNP transistor in a TO-3P Plastic Package, designed for 100W high fidelity audio frequency amplifier output stages. It serves as a complementary component to the NJW0281GC and is suitable for general power amplification applications.

Product Attributes

  • Brand: Fsb (implied by datasheet URL)
  • Package Type: TO-3P Plastic Package
  • Transistor Type: PNP Silicon

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO -360 V
Collector to Emitter Voltage VCEO -360 V
Emitter to Base Voltage VEBO -5 V
Collector Current - Continuous IC -15 A
Peak Collector Current ICP -30 A
Base Current IB -1.5 A
Collector Power Dissipation PC(TC=25) 150 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Electrical Characteristics (Ta=25)
Collector to Emitter Breakdown Voltage VCEO IC=-50mA, IB=0 -360 V
Collector Cut-Off Current ICBO VCB=-230V, IE=0 -5.0 A
Emitter Cut-Off Current IEBO VEB=-5.0V, IC=0 -5.0 A
DC Current Gain hFE(1) VCE=-5.0V, IC=-1.0A 55 160
hFE(2) VCE=-5.0V, IC=-7.0A 35 80
Collector to Emitter Saturation Voltage VCE(sat) IC=-8.0A, IB=-0.8A -1.5 -3.0 V
Base to Emitter Voltage VBE VCE=-5.0V, IC=-7.0A -1.2 -1.5 V
Transition Frequency fT IC=-1.0A, VCE=-5.0V 30 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1.0MHz 360 pF

Packaging Specifications

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Inner Box Dimensions (mm) Outer Box Dimensions (mm)
TO-3P (Tube) 30 15 450 5 2250 497.5468 57516450

Soldering Information

  • Temperature Profile for Dip Soldering (Pb-Free): Preheating: 25~150 for 60~90 sec; Peak Temp.: 2555 for 50.5 sec; Cooling Speed: 2~10/sec.
  • Resistance to Soldering Heat Test Conditions: Temp.: 2705, Time: 101 sec.

Marking Instructions

The marking consists of: BR (Company Code), NJW0302GC (Product Type), and **** (Lot No. Code, which changes with Lot No.).


2410121236_BLUE-ROCKET-NJW0302GC_C7429849.pdf

Send your message to this supplier
Send Now

General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package

Ask Latest Price
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
5uA
Pd - Power Dissipation :
150W
Transition frequency(fT) :
30MHz
type :
PNP
Current - Collector(Ic) :
15A
Contact Supplier
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement