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NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
200mA
Collector - Emitter Voltage VCEO :
40V
Description :
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23
Mfr. Part # :
MMBT3904
Model Number :
MMBT3904
Package :
SOT-23
Description

Product Overview

This NPN transistor, the MMBT3906, is an epitaxial planar die construction device designed for general-purpose applications. It offers complementary functionality to PNP transistors and is recommended for various electronic circuits. The transistor is housed in a compact SOT-23 plastic surface-mounted package with 3 leads.

Product Attributes

  • Complementary Type: PNP Transistor MMBT3906
  • Construction: Epitaxial Planar Die
  • Marking: 1AM
  • Package: SOT-23 (Plastic surface mounted package; 3 leads)
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 60 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) 40 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) 6 V
Collector Current IC (Ta=25 unless otherwise noted) 200 mA
Total Device Dissipation PC (Ta=25 unless otherwise noted) 200 mW
Thermal Resistance Junction to Ambient RJA (Ta=25 unless otherwise noted) 625 /W
Junction Temperature TJ (Ta=25 unless otherwise noted) 150
Storage Temperature Tstg (Ta=25 unless otherwise noted) -55 +150
Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Collector cut-off current ICEX VCE=30V, VBE(off)=3V 50 nA
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC=10mA 100 300
DC current gain hFE(2) VCE=1V, IC= 50mA 60
DC current gain hFE(3) VCE=1V, IC= 100mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V
Transition frequency fT VCE=20V, IC=10mA, f=100MHz 300 MHz
Delay Time td VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS
Rise Time tr VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA 35 nS
Storage Time ts VCC=3V, IC=10mA, IB1=-IB2=1mA 200 nS
Fall Time tf VCC=3V, IC=10mA, IB1=-IB2=1mA 50 nS

2410121523_CBI-MMBT3904_C2828445.pdf

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NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Contact Supplier
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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