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Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits
Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
200MHz
type :
PNP
Number :
2 PNP
Current - Collector(Ic) :
200mA
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor PNP 45V 200mA 200MHz 300mW Surface Mount SOT-363
Mfr. Part # :
BC857DW
Model Number :
BC857DW
Package :
SOT-363
Description

Product Overview

This product features two PNP transistors integrated into a single SOT-363 package. This dual transistor design offers advantages such as reducing component count and saving board space, with no mutual interference between the transistors. It is suitable for applications requiring PNP transistor functionality in a compact form factor.

Product Attributes

  • Package Type: SOT-363
  • Transistor Type: PNP + PNP (Dual Transistor)
  • Marking: 3F
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic=-10A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,IB=0 -45 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA
DC current gain hFE VCE=-5V,IC=-2mA 125 630
Collector-emitter saturation voltage VCE(sat)(1) IC=-10mA,IB=-0.5mA -0.3 V
Collector-emitter saturation voltage VCE(sat)(2) IC=-100mA,IB=-5mA -0.65 V
Base-emitter voltage VBE(1) VCE=-5V,IC=-2mA -0.6 -0.75 V
Base-emitter voltage VBE(2) VCE=-5V,IC=-10mA -0.82 V
Transition frequency fT VCE=-5V,IC=-10mA,f=100MHz 200 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 3.5 pF
Noise figure NF VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz 2.5 dB
Symbol Parameter Value Units
VCBO Collector- Base Voltage -50 V
VCEO Collector-Emitter Voltage -45 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.3 W
RJA Thermal Resistance from Junction to Ambient 417 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

2410121713_CBI-BC857DW_C2836077.pdf

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Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
200MHz
type :
PNP
Number :
2 PNP
Contact Supplier
Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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