MachineU > China Products
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
Specifications
Current - Collector Cutoff :
100nA
Emitter-Base Voltage(Vebo) :
5V
Transition frequency(fT) :
50MHz
Number :
1 NPN
type :
NPN
Vce Saturation(VCE(sat)) :
350mV@350mA,35mA
Pd - Power Dissipation :
1W
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
100V
Operating Temperature :
-40℃~+125℃
Description :
1 NPN NPN 1W 1A 100V SOT-89-3 Single Bipolar Transistors RoHS
Mfr. Part # :
2N6718G-B-AB3-R
Model Number :
2N6718G-B-AB3-R
Package :
SOT-89-3
Description

Product Overview

The UTC 2N6718 is a general-purpose NPN silicon transistor designed for medium power amplifier and switching applications, offering high power (850mW) and high current (1A) capabilities.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Product Code: 2N6718
  • Type: NPN General Planar Transistor
  • Certifications: Lead Free, Halogen Free

Technical Specifications

ParameterSymbolSOT-89TO-126CTO-92UnitNotes
Collector-Base VoltageVCBO100V
Collector-Emitter VoltageVCEO100V
Emitter-Base VoltageVEBO5V
Collector Current (Continue)IC1A
Collector Current (Pulse)IC2A
Total Power DissipationPD11.6850mWDevice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction TemperatureTJ+150C
Operating TemperatureTOPR-40 ~ +125C
Storage TemperatureTSTG-55 ~ +150C
Junction to Ambient Thermal ResistanceJA12578147C/W
Junction to Case Thermal ResistanceJC706.2580C/W
Collector-Base Breakdown VoltageBVCBO100VIC=100uA
Collector-Emitter Breakdown VoltageBVCEO100VIC=1mA
Emitter-Base Breakdown VoltageBVEBO5VIE=10A
Collector-Emitter Saturation VoltageVCE(SAT)350mVIC=350mA, IB=35mA
Collector Cut-Off CurrentICBO100nAVCB=80V
DC Current GainhFE180VCE=1V, IC=50mA
DC Current GainhFE250~300VCE=1V, IC=250mA
DC Current GainhFE320VCE=1V, IC=500mA
Current Gain - Bandwidth ProductfT50MHzVCE=10V, IC=50mA, f=100MHz
Output CapacitanceCob20pFVCB=10V, IE=0, f=1MHz

2301111830_UTC-2N6718G-B-AB3-R_C2826600.pdf

Send your message to this supplier
Send Now

Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching

Ask Latest Price
Product Detail
Current - Collector Cutoff :
100nA
Emitter-Base Voltage(Vebo) :
5V
Transition frequency(fT) :
50MHz
Number :
1 NPN
type :
NPN
Vce Saturation(VCE(sat)) :
350mV@350mA,35mA
Contact Supplier
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement