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Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package
Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
100MHz
type :
PNP
Number :
1 PNP
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 200mW Surface Mount SOT-23
Mfr. Part # :
BC857A
Model Number :
BC857A
Package :
SOT-23
Description

Product Overview

The BC856BC860 series are PNP Silicon Epitaxial Transistors designed for versatile switching and amplifier applications. These transistors are housed in a compact SOT-23 plastic package, making them suitable for space-constrained designs. They offer a range of voltage and current ratings suitable for general-purpose electronic circuits.

Product Attributes

  • Package Type: SOT-23 Plastic Package

Technical Specifications

Parameter Symbol BC856 BC857, BC860 BC858, BC859 Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage -VCBO 80 50 30 V
Collector Emitter Voltage -VCEO 65 45 30 V
Emitter Base Voltage -VEBO 5 V
Collector Current -IC 100 mA
Peak Collector Current -ICM 200 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -65 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain (at -VCE = 5 V, -IC = 2 mA) Group A hFE 110 - 220 - - -
DC Current Gain (at -VCE = 5 V, -IC = 2 mA) Group B hFE 200 - 450 - - -
DC Current Gain (at -VCE = 5 V, -IC = 2 mA) Group C hFE 420 - 800 - - -
Collector Base Cutoff Current (at -VCB = 30 V) -ICBO < 15 nA
Collector Base Breakdown Voltage (at -IC = 10 A) -V(BR)CBO 80 50 30 V
Collector Emitter Breakdown Voltage (at -IC = 10 A) -V(BR)CES 80 50 30 V
Collector Emitter Breakdown Voltage (at -IC = 10 mA) -V(BR)CEO 65 45 30 V
Emitter Base Breakdown Voltage (at -IE = 1 A) -V(BR)EBO 5 V
Collector Emitter Saturation Voltage (at -IC = 10 mA, -IB = 0.5 mA) -VCE(sat) < 0.3 V
Collector Emitter Saturation Voltage (at -IC = 100 mA, -IB = 5 mA) -VCE(sat) < 0.65 V
Base Emitter On Voltage (at -IC = 2 mA, -VCE = 5 V) -VBE(on) < 0.6 V
Base Emitter On Voltage (at -IC = 10 mA, -VCE = 5 V) -VBE(on) < 0.75 - 0.82 V
Current Gain Bandwidth Product (at -VCE = 5 V, -IC = 10 mA, f = 100 MHz) fT > 100 MHz
Output Capacitance (at -VCB = 10 V, f = 1 MHz) Cob < 6 pF
Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz) BC856, BC857, BC858 NF < 4 dB
Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30~15 KHz) BC859, BC860 NF < 2 dB

2410121238_CBI-BC857A_C2919766.pdf

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Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
100MHz
type :
PNP
Number :
1 PNP
Contact Supplier
Versatile Switching Transistor CBI BC857A PNP Silicon Epitaxial in Space Saving SOT23 Plastic Package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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