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NPN Silicon Epitaxial Transistor Model CBI BC848C in SOT23 Package for Switching Amplifier Functions
NPN Silicon Epitaxial Transistor Model CBI BC848C in SOT23 Package for Switching Amplifier Functions
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
30V
Description :
Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 200mW Surface Mount SOT-23
Mfr. Part # :
BC848C
Model Number :
BC848C
Package :
SOT-23
Description

Product Overview

This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. Complementary PNP transistors like the BC856...BC860 are recommended for specific applications. The transistor is housed in a SOT-23 Plastic Package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Epitaxial Transistor
  • Package: SOT-23 Plastic Package

Technical Specifications

Parameter Symbol Model Value Units
Collector Base Voltage VCBO BC846 80 V
BC847, BC850 50 V
BC848, BC849 30 V
Collector Emitter Voltage VCEO BC846 65 V
BC847, BC850 45 V
BC848, BC849 30 V
Emitter Base Voltage VEBO BC846, BC847 6 V
BC848, BC849, BC850 5 V
Collector Current IC - 100 mA
Peak Collector Current ICM - 200 mA
Power Dissipation Ptot - 200 mW
Junction Temperature TJ - 150 C
Storage Temperature Range TS - -65 to +150 C
DC Current Gain hFE A (VCE = 5 V, IC =2 mA) 110 - 220 -
B (VCE = 5 V, IC =2 mA) 200 - 450 -
C (VCE = 5 V, IC =2 mA) 420 - 800 -
Collector Emitter Saturation Voltage VCEsat (IC = 10 mA, IB = 0.5 mA) - 250 mV
(IC = 100 mA, IB = 5 mA) - 600 mV
Base Emitter On Voltage VBE(on) (IC = 2 mA, VCE = 5 V) 580 - 700 mV
(IC = 10 mA, VCE = 5V) - 720 mV
Collector Cutoff Current ICBO (VCB = 30 V) - 15 nA
Current Gain Bandwidth Product fT (VCE = 5 V, IC = 10 mA, f = 100 MHz) - 300 MHz
Output Capacitance Cob (VCB = 10 V, f = 1 MHz) - 6 pF
Input Capacitance Cib (VEB = 0.5 V, f = 1 MHz) - 9 -
Noise Figure NF (IC = 200 A, VCE = 5 V, RG = 2 K, f =1 KHz, BC846, BC847, BC848) - 10 dB
(IC = 200 A, VCE = 5 V, RG = 2 K, f =1 KHz, BC849, BC850) - 4 dB
(IC = 200 A,VCE = 5 V, RG = 2 K, f = 30 ~15 KHz, BC849) - 4 dB
(IC = 200 A,VCE = 5 V, RG = 2 K, f = 30 ~15 KHz, BC850) - 3 dB

2410121447_CBI-BC848C_C21714251.pdf

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NPN Silicon Epitaxial Transistor Model CBI BC848C in SOT23 Package for Switching Amplifier Functions

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Contact Supplier
NPN Silicon Epitaxial Transistor Model CBI BC848C in SOT23 Package for Switching Amplifier Functions

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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