Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
1W
Transition frequency(fT) :
200MHz
type :
PNP
Current - Collector(Ic) :
1.5A
Collector - Emitter Voltage VCEO :
25V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor PNP 25V 1.5A 200MHz 1W Through Hole TO-92
Mfr. Part # :
8550-C
Model Number :
8550-C
Package :
TO-92
Description

Product Overview

The 8550 is a Silicon PNP transistor housed in a TO-92 plastic package. It is designed for high collector current (IC) and collector power dissipation (PC), serving as a complementary pair to the 8050 transistor. This device is ideal for 2W output amplifiers in portable radios utilizing class B push-pull operation.

Product Attributes

  • Package Type: TO-92 Plastic Package
  • Transistor Type: PNP Silicon
  • Complementary Pair: 8050

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO -40 V
Collector to Emitter Voltage VCEO -25 V
Emitter to Base Voltage VEBO -6.0 V
Collector Current - Continuous IC -1.5 A
Collector Current - Peak (t1ms) ICM -3 A
Base Current - Continuous IB -0.5 A
Collector Power Dissipation PC 1.0 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Electrical Characteristics (Ta=25)
Collector to Base Breakdown Voltage VCBO -40 V IC=-0.1mA, IE=0
Collector to Emitter Breakdown Voltage VCEO -25 V IC=-2.0mA, IB=0
Emitter to Base Breakdown Voltage VEBO -6.0 V IE=-0.1mA, IC=0
Collector Cut-Off Current ICBO -0.1 A VCB=-35V, IE=0
Emitter Cut-Off Current IEBO -0.1 A VEB=-6.0V, IC=0
DC Current Gain hFE(1) VCE=-1.0V, IC=-100mA 85 300
DC Current Gain hFE(2) VCE=-1.0V, IC=-800mA 40
DC Current Gain hFE(3) VCE=-1.0V, IC=-5.0mA 45
Collector to Emitter Saturation Voltage VCE(sat) V IC=-800mA, IB=-80mA -0.28 -0.5
Base to Emitter Saturation Voltage VBE(sat) V IC=-800mA, IB=-80mA -0.98 -1.2
Base to Emitter Voltage VBE V VCE=-1.0V, IC=-10mA -0.66 -1.0
Transition Frequency fT MHz VCE=-10V, IC=-50mA 100 200
Collector Output Capacitance Cob pF VCB=-10V, IE=0, f=1.0MHz 15

Packaging & Marking

Marking Instructions:

  • BR: Company Code
  • 8550: Product Type
  • B: hFE Classification Symbol
  • ****: Lot No. Code (changes with Lot No.)

Packaging Specifications:

  • Bulk Package: TO-92, 1,000 Units/Bag, 10 Bags/Inner Box, 5 Inner Boxes/Outer Box (50,000 Units/Outer Box)
  • Ammo Package: TO-92, 3,000 Units/Tape, 1 Tape/Inner Box, 120 Rows/Inner Box, 10 Inner Boxes/Outer Box (30,000 Units/Outer Box)

Soldering Profile

Temperature Profile for Dip Soldering (Pb-Free):

  • Preheating: 25~150, Time: 60~90 sec
  • Peak Temp.: 2555, Duration: 50.5 sec
  • Cooling Speed: 2~10/sec

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2705
  • Time: 101 sec

2410121236_BLUE-ROCKET-8550-C_C2844066.pdf

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TO92 Plastic Package PNP Silicon Transistor BLUE ROCKET 8550-C Suitable for Portable Radio Amplifiers

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Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
1W
Transition frequency(fT) :
200MHz
type :
PNP
Current - Collector(Ic) :
1.5A
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TO92 Plastic Package PNP Silicon Transistor BLUE ROCKET 8550-C Suitable for Portable Radio Amplifiers

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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