Specifications
Current - Collector Cutoff :
50uA
Emitter-Base Voltage(Vebo) :
5V
Pd - Power Dissipation :
20W
Transition frequency(fT) :
3MHz
type :
PNP
Number :
1 PNP
Current - Collector(Ic) :
6A
Collector - Emitter Voltage VCEO :
100V
Description :
Bipolar (BJT) Transistor PNP 100V 6A 3MHz 20W Surface Mount TO-252
Mfr. Part # :
MJD42C
Model Number :
MJD42C
Package :
TO-252
Description

Product Overview

The MJD42C is a Silicon PNP transistor housed in a TO-252 Plastic Package. It serves as a complement to the MJD41C and is designed for medium power linear switching applications. This device offers robust performance with key electrical characteristics and is suitable for various industrial uses.

Product Attributes

  • Brand: Fsb (implied by datasheet URL and company code 'BR')
  • Package Type: TO-252 Plastic Package
  • Transistor Type: PNP Semiconductor Triode
  • Complementary to: MJD41C
  • Marking Code: BR **** MJD42C

Technical Specifications

Parameter Symbol Rating (Ta=25) Unit
Collector to Base Voltage VCBO -100 V
Collector to Emitter Voltage VCEO -100 V
Emitter to Base Voltage VEBO -5.0 V
Collector Current - Continuous IC -6.0 A
Base Current - Continuous IB -2.0 A
Collector Power Dissipation (Ambient) PD 1.75 W
Collector Power Dissipation (Case Temp=25) PD(TC=25) 20 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Emitter Breakdown Voltage VCEO IC=-30mA, IB=0 -100 V
Collector Cut-Off Current ICEO VCE=-60V, IB=0 -50 A
Collector Cut-Off Current ICES VCE=-100V, VBE=0 -10 A
Emitter Cut-Off Current IEBO VBE=-5.0V, IC=0 -0.5 mA
DC Current Gain hFE(1) VCE=-4.0V, IC=-3.0A 15 75
DC Current Gain hFE(2) VCE=-4.0V, IC=-0.3A 30
Collector to Emitter Saturation Voltage VCE(sat) IC=-6.0A, IB=-600mA -1.5 V
Base to Emitter On Voltage VBE(on) VCE=-6.0V, IC=-4.0A -2.0 V
Current-Gain Bandwidth Product fT VCE=-10V, IC=-500mA 3 MHz

Packaging & Soldering

Soldering Profile (Pb-Free)

  • Preheating: 25-150, 60-90 seconds
  • Peak Temperature: 2455, Duration: 50.5 seconds
  • Cooling Speed: 2-10/sec

Resistance to Soldering Heat Test Conditions

  • Temperature: 2605
  • Time: 101 sec

Packaging Specifications

Reel Package
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Dimension Inner Box Dimension Outer Box Dimension
TO-252 2,500 2 5,000 5 25,000 1316 36036050 385257392
Tube Package
Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Tube Dimension Inner Box Dimension Outer Box Dimension
TO-251/252 75 48 3,600 5 18,000 52620.55.25 55516450 575290180

2411121107_BLUE-ROCKET-MJD42C_C358467.pdf

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TO252 Plastic Package PNP Transistor BLUE ROCKET MJD42C Medium Power Linear Switching Device

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Current - Collector Cutoff :
50uA
Emitter-Base Voltage(Vebo) :
5V
Pd - Power Dissipation :
20W
Transition frequency(fT) :
3MHz
type :
PNP
Number :
1 PNP
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TO252 Plastic Package PNP Transistor BLUE ROCKET MJD42C Medium Power Linear Switching Device

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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