This plastic-encapsulated dual transistor offers two NPN transistors within a single package, significantly reducing component count and board space. It ensures no mutual interference between the transistors, making it suitable for various electronic applications. The device is designed for efficient operation and reliability.
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 65 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current Continuous | IC | 0.1 | A | |
| Collector Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55-150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 80 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 65 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | V |
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 15 | nA |
| Emitter cut-off current | IEBO | IC=0, VEB=5V | 5 | A |
| DC current gain | hFE | VCE=5V,IC=2mA | 110 | |
| Collector-emitter saturation voltage (1) | VCE(sat)(1) | IC=10mA,IB=0.5mA | 0.1 | V |
| Collector-emitter saturation voltage (2) | VCE(sat)(2) | IC=100mA,IB=5mA | 0.3 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=10mA,IB=0.5mA | 0.77 | V |
| Transition frequency | fT | VCB=5V,IE=10mA,f=100MHz | 100 | MHz |
| Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 1.5 | pF |