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SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks
SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
65V
Description :
Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 200mW Surface Mount SOT-23
Mfr. Part # :
BC850C
Model Number :
BC850C
Package :
SOT-23
Description

Product Overview

The BC846-BC850 series are NPN Silicon Epitaxial Transistors designed for switching and amplifier applications. For complementary PNP types, the BC856-BC860 is recommended. These transistors are housed in a SOT-23 Plastic Package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Silicon Epitaxial Transistor
  • Package: SOT-23 Plastic Package

Technical Specifications

Parameter Symbol BC846 BC847, BC850 BC848, BC849 Units
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 6 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation Ptot 200 mW
Junction Temperature TJ 150 C
Storage Temperature Range TS - 65 to + 150 C
Characteristics (Tamb = 25 C)
DC Current Gain at VCE = 5 V, IC =2 mA hFE 110 - 220 200 - 450 420 - 800 -
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCEsat - 250 mV
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA VCEsat - 600 mV
Base Emitter On Voltage at IC = 2 mA, VCE = 5 V VBE(on) 580 - 700 mV
Base Emitter On Voltage at IC = 10 mA, VCE = 5V VBE(on) - 720 mV
Collector Cutoff Current at VCB = 30 V ICBO - 15 nA
Current Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 MHz
Output Capacitance at VCB = 10 V, f = 1 MHz Cob - 6 pF
Input Capacitance at VEB = 0.5 V, f = 1 MHz Cib 9 pF
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f =1 KHz NF 10 dB (BC846, BC847, BC848) 4 dB (BC846, BC847, BC848) 4 dB (BC846, BC847, BC848) -
Noise Figure at IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz NF - - 3 dB (BC849, BC850) -
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2410121447_CBI-BC850C_C21714249.pdf

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SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
15nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Contact Supplier
SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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