Specifications
Brand Name :
Diodes Incorporated
Model Number :
MMDT2222A-7-F
Place of Origin :
United States
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
Delivery Time :
5-8 work days
Packaging Details :
SMD/SMT SOT-363-6
product :
Bipolar transistor-bipolar junction transistor (BJT)
Installation style :
SMD/SMT
Package/box :
SOT-363-6
encapsulation :
Reel,Cut Tape,MouseReel
Product type :
BJTs - Bipolar Transistors
series :
MMDT22
unit weight :
6 mg
Description

Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-363-6
Transistor polarity: NPN
Configuration: Dual
Maximum DC collector current: 600 mA
Maximum collector-emitter voltage VCEO: 40 V.
Collector-base voltage VCBO: 75 V
Emitter-base voltage VEBO: 6 V
Collector-emitter saturation voltage: 1 V
Pd- power dissipation: 200mw
Gain bandwidth product ft: 300mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: MMDT22
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Collector continuous current: 600 mA
Maximum DC current gain hFE: 300
Height: 1 mm
Length: 2.2 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 1.35 mm
Unit weight: 6 mg

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MMDT2222A-7 Bipolar transistor-Bipolar junction transistor (BJT) 40V 200mW

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Brand Name :
Diodes Incorporated
Model Number :
MMDT2222A-7-F
Place of Origin :
United States
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
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MMDT2222A-7  Bipolar transistor-Bipolar junction transistor (BJT) 40V 200mW

Shenzhen Hefengxin Technology Co., Ltd.

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Since 2016
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Employee Number :
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