Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-323-3
Transistor polarity: NPN
Configuration: Single
Maximum DC collector current: 100ma
Maximum collector-emitter voltage VCEO: 30 V.
Collector-base voltage VCBO: 30 V
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 200 mV
Pd- power dissipation: 200mw
Gain bandwidth product ft: 300mhz
Minimum operating temperature:-65 C.
Maximum operating temperature:+150 C.
Series: BC848B
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/basegain hfemin: 200
Height: 1 mm
Length: 2.2 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 1.35 mm
Unit weight: 5 mg