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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW
2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW
Specifications
Brand Name :
Toshiba
Model Number :
2SA1162-GR,LF
Place of Origin :
Japan
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
Delivery Time :
5-8 work days
Packaging Details :
SMD/SMT SC-59-3
product :
Bipolar transistor-bipolar junction transistor (BJT)
Installation style :
SMD/SMT
package/box :
SC-59-3
series :
2SA1162
encapsulation :
Reel，Cut Tape，MouseReel
Product type :
BJTs - Bipolar Transistors
unit weight :
8 mg
Description

Manufacturer: Toshiba
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SC-59-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 150 mA
Maximum collector-emitter voltage VCEO: 50 V.
Collector-base voltage VCBO: 50 V
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 100 mV
Pd- power dissipation: 150 mW
Gain bandwidth product fT: 80 MHz
Maximum operating temperature:+125c
Qualification: AEC-Q101
Series: 2SA1162
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Toshiba
Dc collector/basegain hfemin: 70
Maximum DC current gain hFE: 400
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Unit weight: 8 mg

2SA1162-GR.pdf

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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

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Product Detail
Brand Name :
Toshiba
Model Number :
2SA1162-GR,LF
Place of Origin :
Japan
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
Contact Supplier
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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

Shenzhen Hefengxin Technology Co., Ltd.

Verified Supplier
2 Years
shenzhen
Since 2016
Business Type :
Agent
Main Products :
Integrated Circuit IC, Multilayer Ceramic Capacitor, Thick Film Resistor
Total Annual :
1000000-2000000
Employee Number :
100~120
Certification Level :
Verified Supplier
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