Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-89-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 2 A
Maximum collector-emitter voltage VCEO: 100 V.
Collector-base voltage vcbo: 110 v.
Emitter-base voltage VEBO: 7 V
Collector-emitter saturation voltage: 220 mV
Pd- power dissipation: 4.46 W
Gain bandwidth product fT: 142 MHz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: ZXTP191
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/base gain hfemin: 200 at 100ma, 2 v, 70 at 1a, 2 v, 20 at 2a, 2 v.
Maximum DC current gain hFE: 200
Height: 1.6 mm
Length: 4.6 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 2.6 mm
Unit weight: 52 mg