Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 500ma
Maximum collector-emitter voltage VCEO: 350 V.
Collector-base voltage vcbo: 350 v.
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 1 V
Pd- power dissipation: 300mw
Gain bandwidth product ft: 50mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: DP 350 t 05
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/basegain hfemin: 15
Height: 1 mm
Length: 3.05 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 1.4 mm
Unit weight: 8 mg