Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: NPN
Configuration: Single
Maximum DC collector current: 2 A
Maximum collector-emitter voltage VCEO: 20 V.
Collector-base voltage VCBO: 20 V
Emitter-base voltage VEBO: 6 V
Collector-emitter saturation voltage: 100 mV
Pd- power dissipation: 600 mW
Gain bandwidth product ft: 150mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: DSS202
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/basegain hfemin: 200 at2a, 2 v.
Maximum DC current gain hFE: 200 at 10 ma, 2 v.
Height: 1 mm
Length: 2.9 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 1.3mm
Unit weight: 8 mg