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Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode
Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode
Specifications
Current - Collector Cutoff :
10uA
Pd - Power Dissipation :
20W
Current - Collector(Ic) :
8A
Collector - Emitter Voltage VCEO :
100V
Description :
20W 8A 100V TO-252 Single Bipolar Transistors RoHS
Mfr. Part # :
MJD122
Model Number :
MJD122
Package :
TO-252
Description

Product Overview

The MJD122 is a medium power NPN Darlington transistor designed for linear switching applications. It offers high DC current gain and features a built-in damper diode between the collector and emitter for enhanced protection. This device is electrically similar to the popular TIP122 and is complementary to the MJD127.

Product Attributes

  • Brand: Yongyutai
  • Model: MJD122
  • Type: Darlington Transistor

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-base voltageBVCBOIC = 10mAIE = 0100V
Collector-emitter voltageBVCEOIC = 30mAIB = 0100V
Emitter-base voltageBVEBOIE = 30mAIC = 05V
Collector cut-off currentICBOVCB = 100VIE = 010A
Collector cut-off currentICEOVCE = 50VIE = 010A
Emitter cut-off currentIEBOVEB = 5VIC = 02mA
DC current gainhFEVCE= 4VIC= 4A1000
DC current gainhFEVCE= 4VIC= 8A500
Collector-emitter saturation voltageVCE(sat)IC =4AIB = 16mA2V
Collector-emitter saturation voltageVCE(sat)IC =8AIB = 80mA4V
Base-emitter saturation voltageVBE(sat)IC =8AIB = 80mA4.5V
Base-emitter on voltageVBE (on)VCE= 4VIC= 4A2.8V
Output capacitanceCobVCB= 10Vf=1MHz200pF
Collector-base voltageBVCBO100V
Collector-emitter voltageBVCEO100V
Emitter-base voltageBVEBO5V
Collector current (DC)IC8A
Collector current (Pluse)ICP8A
Collector dissipation powerPCTA =25 1.75W
Collector dissipation powerPCTC =25 20W
Junction TemperatureTj150
Storage TemperatureTstg-55150

2505071457_KUU-MJD122_C48686204.pdf

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Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode

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Product Detail
Current - Collector Cutoff :
10uA
Pd - Power Dissipation :
20W
Current - Collector(Ic) :
8A
Collector - Emitter Voltage VCEO :
100V
Description :
20W 8A 100V TO-252 Single Bipolar Transistors RoHS
Mfr. Part # :
MJD122
Contact Supplier
Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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