The S8050 is an NPN transistor in a SOT-23 package, designed as a complementary part to the S8550. It features a continuous collector current of up to 0.5A.
| Parameter | Symbol | Value | Units | Test Conditions | MIN | TYP | MAX |
| Collector-Base Voltage | VCBO | 40 | V | ||||
| Collector-Emitter Voltage | VCEO | 25 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current -Continuous | IC | 0.5 | A | ||||
| Collector Power Dissipation | PC | 0.3 | W | TA=25 | |||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | Tstg | -55-150 | |||||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC= 100A, IE=0 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=1mA, IB=0 | |||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100A, IC=0 | |||
| Collector cut-off current | ICBO | 1 | A | VCB=30 V , IE=0 | |||
| Collector cut-off current | ICEO | 10 | A | VCE=25V , IB=0 | |||
| Emitter cut-off current | IEBO | 1 | A | VEB=5V , IC=0 | |||
| DC current gain | hFE | VCE=1V, IC= 50mA | 80 | 400 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=500mA, IB= 50mA | 0.5 | |||
| Base-emitter saturation voltage | VBE(sat) | V | IC=500mA, IB= 50mA | 1.2 |
Range: 100-200, 200-400, 400-600, 300-400