The MMBT2222A is an NPN transistor featuring epitaxial planar die construction. It is designed for general-purpose applications and offers complementary PNP type availability (MMBT2907A). This device is suitable for various switching and amplification circuits.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 75 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current -Continuous | IC | 600 | mA | |||
| Collector Dissipation | PC | (Ta=25) | 300 | mW | ||
| Collector-base breakdown voltage | V(BR)CBO | IC= 10A, IE=0 | 75 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.01 | A | ||
| Collector cut-off current | ICEX | VCE=30V,VBE(off)=3V | 0.01 | A | ||
| Emitter cut-off current | IEBO | VEB= 3V, IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=10V, IC= 150mA | 100 | 300 | ||
| DC current gain | hFE | VCE=10V, IC= 0.1mA | 40 | |||
| DC current gain | hFE | VCE=10V, IC= 500mA | 42 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 1 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=150 mA, IB=15mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 2.0 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=150 mA, IB=15mA | 1.2 | V | ||
| Transition frequency | fT | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | ||
| Delay time | td | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 10 | ns | ||
| Rise time | tr | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 25 | ns | ||
| Storage time | tS | VCC=30V, IC=150mA IB1=-IB2=15mA | 225 | ns | ||
| Fall time | tf | VCC=30V, IC=150mA IB1=-IB2=15mA | 60 | ns |