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high power transistor JUXING D13007MF designed for electronic ballasts and general power circuits
high power transistor JUXING D13007MF designed for electronic ballasts and general power circuits
Specifications
Emitter-Base Voltage(Vebo) :
11V
Current - Collector Cutoff :
100uA
Pd - Power Dissipation :
80W
Transition frequency(fT) :
4MHz
type :
NPN
Number :
-
Current - Collector(Ic) :
8A
Collector - Emitter Voltage VCEO :
400V
Operating Temperature :
-55℃~+150℃@(Tj)
Description :
Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole ITO-220AB
Mfr. Part # :
D13007MF
Model Number :
D13007MF
Package :
ITO-220AB
Description

Product Overview

The D13007MF is a high power NPN bipolar transistor designed for electronic ballasts and general power amplifier circuits. It features high frequency power conversion, high switching speed, high reliability, high current capacity, and high withstand voltage, utilizing advanced planar process technology and triple diffusion technology for an optimal balance between current capacity and endurance.

Product Attributes

  • Brand: trr-jx.com
  • Model: D13007MF
  • Version: 02

Technical Specifications

SymbolItemTest ConditionsMinimum and maximum valuesUnit
VCBOCollector-Base DC Voltage700V
VCEOCollector-Emitter DC Voltage400V
VEBOEmitter-Base DC Voltage8V
IcMaximum Collector DC Current11A
PcMaximum Collector Power Dissipation150W
TjMaximum Junction Temperature150C
TsStorage Temperature-55~+150C
VCE(sat)(1)Collector emitter saturation voltage dropIC=2A, IB=0.4A1.2V
VCE(sat)(2)Collector emitter saturation voltage dropIC=8A, IB=2A1.56V
VBE(sat)Base emitter saturation voltage dropIC=8A, IB=2A2.5V
hFE(1)DC Current GainIC=2A, IB=0.5A50
hFE(2)DC Current GainIC=5A, IB=2A70
tfFall timeIC=5A, VCC=24V0.7S
trRise timeS
tsStorage timeIB1=-IB2=11A1.2S
VCEO(SUS)Collector-Emitter Holding VoltageIc=10mA,IB=0400V
V(BR)CBOCollector-Base Breakdown VoltageIc=1mA,IB=0700V
V(BR)EBOEmitter-Base Breakdown VoltageIE=1mA,Ic=07V
ICBOCollector-Base Reverse Leakage CurrentVCB=700V, IE=00.5mA
ICEOCollector-Emitter Reverse Leakage CurrentVCE=430V,IB=00.1mA
IEBOEmitter-Base Reverse Leakage CurrentVEB=7V, IC=01mA
fCharacteristic frequencyVCE=5V, IC=5A5MHz
Rth(jc)Project junction to case thermal resistance1.2V /W

2504101957_JUXING-D13007MF_C20417145.pdf

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high power transistor JUXING D13007MF designed for electronic ballasts and general power circuits

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Product Detail
Emitter-Base Voltage(Vebo) :
11V
Current - Collector Cutoff :
100uA
Pd - Power Dissipation :
80W
Transition frequency(fT) :
4MHz
type :
NPN
Number :
-
Contact Supplier
high power transistor JUXING D13007MF designed for electronic ballasts and general power circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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