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NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic Encapsulate
NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic Encapsulate
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
250mW
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
1.5A
Collector - Emitter Voltage VCEO :
25V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 250mW Surface Mount SOT-323
Mfr. Part # :
JTDSS8050W
Model Number :
JTDSS8050W
Package :
SOT-323
Description

SS8050W Transistor (NPN)

The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'.

Product Attributes

  • Brand: JTD (SHENZHEN JTD ELECTRONICS CO.,LTD)
  • Origin: Shenzhen, China
  • Material: Plastic-Encapsulate Transistor
  • Package Outline: SOT-323

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Collector cut-off current ICEO VCE=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain (hFE(1)) hFE(1) VCE=1V, IC= 100mA 120 400
DC current gain (hFE(2)) hFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT VCE=10V, IC= 50mA, f=30MHz 100 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 250 mW
Thermal Resistance Junction To Ambient RJA 500 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150

2504101957_JTD-JTDSS8050W_C42443449.pdf

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NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic Encapsulate

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
250mW
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
1.5A
Contact Supplier
NPN Bipolar Junction Transistor JTD JTDSS8050W General Purpose Plastic Encapsulate

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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