Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
200mA
Collector - Emitter Voltage VCEO :
40V
Description :
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-323
Mfr. Part # :
JTDMMBT3904W
Model Number :
JTDMMBT3904W
Package :
SOT-323
Description

Product Overview

NPN Transistor, complementary to MMBT3906W, designed for general-purpose applications. Features include a marking of .K2N and a SOT-323 package.

Product Attributes

  • Marking: .K2N
  • Complementary to: MMBT3906W
  • Package: SOT-323

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=10A, IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=040V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=06V
Collector cut-off currentICEXVCE=30V, VEB(off)=3V50nA
Collector cut-off currentICBOVCB= 60V, IE=0100nA
Emitter cut-off currentIEBOVEB=5V, IC=0100nA
DC current gainhFE(1)VCE=1V, IC=10mA100300
DC current gainhFE(2)VCE=1V, IC=50mA60
DC current gainhFE(3)VCE=1V, IC=100mA30
Collector-emitter saturation voltageVCE(sat)IC=50mA, IB=5mA0.3V
Base-emitter saturation voltageVBE(sat)IC=50mA, IB=5mA0.95V
Transition frequencyfTVCE=20V,IC=10mA, f=100MHz300MHz
Delay timetdVCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA35ns
Rise timetrVCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA35ns
Storage timetsVCC=3V, IC=10mA, IB1= IB2=1mA200ns
Fall timetfVCC=3V, IC=10mA, IB1= IB2=1mA50ns
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC200mA
Collector Power DissipationPC200mW
Thermal Resistance Junction To AmbientRJA625/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2504101957_JTD-JTDMMBT3904W_C42443490.pdf

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SOT323 Package NPN Transistor JTD JTDMMBT3904W General Purpose Semiconductor Complementary to MMBT3906W

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Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
300MHz
type :
NPN
Number :
1 NPN
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SOT323 Package NPN Transistor JTD JTDMMBT3904W General Purpose Semiconductor Complementary to MMBT3906W

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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