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High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included
High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included
Specifications
Current - Collector Cutoff :
200uA
Pd - Power Dissipation :
65W
DC Current Gain :
1000
type :
PNP
Current - Collector(Ic) :
5A
Collector - Emitter Voltage VCEO :
100V
Operating Temperature :
-
Description :
65W 1000 PNP 5A 100V TO220 Single Bipolar Transistors RoHS
Mfr. Part # :
TIP105
Model Number :
TIP105
Package :
TO220
Description

Product Overview

This is a PNP Silicon Transistor, specifically a Darlington transistor with an integrated damping diode. It is designed for high-gain circuits and offers a high collector current capability. Key specifications include a collector-emitter voltage of -100V, a continuous collector current of -5A, and a high DC current gain (HFE) of 1000. This device is suitable for applications requiring significant signal amplification.

Product Attributes

  • Brand: MNS-KX
  • Type: PNP Silicon Transistor (Darlington)
  • Integrated Component: Damping Diode

Technical Specifications

Parameter Symbol Description Min Typical Max Unit Test Condition
Storage Temperature Tstg -65 150
Junction Temperature Tj 150
Collector Dissipation Power PC (Tc=25) 65 W
Collector Dissipation Power PC (TA=25) 2 W
Collector-Base Voltage CBO -100 V
Collector-Emitter Voltage CEO -100 V
Emitter-Base Voltage EBO -5 V
Collector Current IC -5 A
Collector Current (Pulse) ICP -8 A
Base Current IB -120 mA
Collector-Base Breakdown Voltage BVCBO -100 V IC=1mA, IE=0
Collector-Emitter Breakdown Voltage BVCEO -100 V IC=5mA, IB=0
Collector-Emitter Cutoff Current ICEO -0.5 mA VCE=50V, IB=0
Collector-Base Cutoff Current ICBO -0.2 mA VCB=100V, IE=0
Emitter-Base Cutoff Current IEBO -2.0 mA VEB=5V, IC=0
DC Current Gain HFE 1000 VCE=3V, IC=0.5A
Collector-Emitter Saturation Voltage VCE(sat1) -2.0 V IC=3A, IB=12mA
Collector-Emitter Saturation Voltage VCE(sat2) -4.0 V IC=5A, IB=20mA
Base-Emitter On Voltage VBE(on) -2.5 V VCE=3V, IC=3A
Common-Base Output Capacitance Cob 200 pF VCB=10V, IE=0, f=0.1MHz

Pinout: 1-Base (B), 2-Collector (C), 3-Emitter (E)

Notes:

  • Exceeding maximum ratings may cause permanent device failure.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • MOSFETs are sensitive to static electricity; protect against static discharge.
  • Shenzhen Minos reserves the right to change specifications without prior notice.

Contact:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777


2409272303_Minos-TIP105_C22389993.pdf

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High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included

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Product Detail
Current - Collector Cutoff :
200uA
Pd - Power Dissipation :
65W
DC Current Gain :
1000
type :
PNP
Current - Collector(Ic) :
5A
Collector - Emitter Voltage VCEO :
100V
Contact Supplier
High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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