The TTC5200 Minos Silicon NPN Triple Diffused Type is designed for power amplifier applications, specifically recommended for 100-W high-fidelity audio frequency amplifier output stages. It serves as a complementary component to the TTA1943 and features a high collector voltage of 230V (min). Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly reduce product reliability, even if operating conditions remain within absolute maximum ratings.
| Characteristics | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | ||||
| Collector-base voltage | VCBO | 230 | V | |
| Collector-emitter voltage | VCEO | 230 | V | |
| Emitter-base voltage | VEBO | 5 | V | |
| Collector current | IC | 15 | A | |
| Base current | IB | 1.5 | A | |
| Collector power dissipation (Tc=25) | PC | 150 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | TSTG | -55~150 | ||
| Electrical Characteristics (Tc=25) | ||||
| Collector cut-off current | ICBO | uA | VCB=230V; IE=0 | |
| Emitter cut-off current | IEBO | uA | VEB=5V; Ic=0 | |
| Collector-emitter breakdown voltage | V(BR)CEO | 230 | V | IC=50mA,IB=0 |
| DC current gain | hFE | 80 | VCE=5V; IC=1A | |
| DC current gain | hFE(2) | 35 | VCE=5V; IC=7A | |
| Collector-emitter saturation voltage | VCE(sat) | 3.0 | V | IC=8A; IB=0.8A |
| Base-emitter voltage | VBE | 1.5 | V | VCE=5V;IC=7A |
| Transition frequency | fT | 30 | MHz | VCE=5V; IC=1A |
| Typical Characteristics | ||||
| Junction-to-Case Thermal Resistance | RJC | 0.35 | /W | |
TO-3PL PACKAGE