This NPN Silicon Transistor is designed for audio amplification and switching power amplification applications. It offers reliable performance with clearly defined electrical parameters and maximum ratings to ensure optimal circuit design and device longevity.
| Parameter | Symbol | Description | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Collector-Base Cut-off Current | ICBO | 60 | A | VCB=30V, IE=0 | |||
| Emitter-Base Cut-off Current | IEBO | 0.3 | A | VEB=5V, IC=0 | |||
| DC Current Gain | hFE | 45 | 90 | VCE=2V, IC=1A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | V | IC=2A, IB=0.2A | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.5 | V | IC=2A, IB=0.2A | |||
| Output Capacitance | Cob | 400 | pF | VCB=10V, IE=0, f=1MHz | |||
| Characteristic Frequency | fT | 1 | MHz | VCE=5V, IE=0.1A | |||
| Collector-Base Voltage | VCBO | 40 | V | ||||
| Collector-Emitter Voltage | VCEO | 30 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | 3 | A | ||||
| Base Current | IB | 0.6 | A | ||||
| Collector Power Dissipation (Tc=25) | PC | 10 | W | ||||
| Collector Power Dissipation (Ta=25) | PC | 1 | W | ||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 |