The 2SC1623 is an NPN bipolar transistor designed for surface mount applications. It offers high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V), making it a complementary part to the 2SA812. This device is suitable for various electronic circuits requiring efficient amplification and switching.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 100 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=60V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 |
| DC current gain | hFE | 90 - 600 | VCE=6V, IC=1mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=100mAIB=10mA |
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=100mAIB=10mA |
| Transition frequency | fT | 250 | MHz | VCE=6V, IC=10mA |