Specifications
Emitter-Base Voltage(Vebo) :
3V
Current - Collector Cutoff :
30nA
Pd - Power Dissipation :
700mW
Transition frequency(fT) :
3.5GHz
type :
NPN
Current - Collector(Ic) :
210mA
Collector - Emitter Voltage VCEO :
16V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 16V 210mA 3.5GHz 700mW Surface Mount SOT-23
Mfr. Part # :
BFR106E6327
Model Number :
BFR106E6327
Package :
SOT-23
Description

Product Overview

The BFR106 is a low-noise silicon bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadband and antenna amplifiers. The collector design supports a 5 V supply voltage, and it comes in a Pb-free (RoHS compliant) SOT23 package. Qualification is available according to AEC-Q101.

Product Attributes

  • Brand: Infineon Technologies
  • Package: SOT23
  • Certifications: Pb-free (RoHS compliant), AEC-Q101 available
  • Handling Precaution: ESD sensitive device

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Collector-emitter voltage, TA = 25CVCEO16V
Collector-emitter voltageVCES20V
Collector-base voltageVCBO20V
Emitter-base voltageVEBO3V
Collector currentIC210mA
Base currentIB21mA
Total power dissipationPtot700mWTS 76 C
Junction temperatureTJ150C
Storage temperatureTStg-55 ... 150C
Thermal Resistance
Junction - soldering pointRthJS105K/WMeasured on the collector lead at the soldering point to the pcb
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO15VIC = 1 mA, IB = 0
Collector-emitter cutoff currentICES0.001AVCE = 20 V, VBE = 0
Collector-emitter cutoff currentICES1AVCE = 10 V, VBE = 0
Collector-base cutoff currentICBO0.03AVCB = 10 V, IE = 0
Emitter-base cutoff currentIEBO1AVEB = 2 V, IC = 0
DC current gainhFE70-IC = 70 mA, VCE = 8 V, pulse measured
DC current gainhFE100-IC = 70 mA, VCE = 8 V, pulse measured
DC current gainhFE140-IC = 70 mA, VCE = 8 V, pulse measured
AC Characteristics
Transition frequencyfT3.5GHzIC = 70 mA, VCE = 8 V, f = 500 MHz
Transition frequencyfT5GHzIC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitanceCcb0.85pFVCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector-base capacitanceCcb1.2pFVCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitanceCce0.27pFVCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitanceCeb3.9pFVEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figureNFmin1.8dBIC = 20 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz
Minimum noise figureNFmin3dBIC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz
Power gain, maximum availableGma13dBIC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
Power gain, maximum availableGma8.5dBIC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz
Transducer gain|S21e|10.5dBIC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
Transducer gain|S21e|5dBIC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz
Third order intercept point at outputIP331dBmVCE = 8 V, IC = 70 mA, f = 0.9 GHz , ZS=ZL=50
1dB compression pointP-1dB22dBmIC = 70 mA, VCE = 8 V, ZS=ZL=50, f = 0.9 GHz

2410121813_Infineon-BFR106E6327_C439780.pdf

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Pb free RoHS compliant Infineon BFR106E6327 transistor in SOT23 package for RF and VHF applications

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Emitter-Base Voltage(Vebo) :
3V
Current - Collector Cutoff :
30nA
Pd - Power Dissipation :
700mW
Transition frequency(fT) :
3.5GHz
type :
NPN
Current - Collector(Ic) :
210mA
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Pb free RoHS compliant Infineon BFR106E6327 transistor in SOT23 package for RF and VHF applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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