MachineU > China Products
NPN transistor Jilin Sino Microelectronics 3DD13003A for power amplifier and switching power supplies
NPN transistor Jilin Sino Microelectronics 3DD13003A for power amplifier and switching power supplies
Specifications
Emitter-Base Voltage(Vebo) :
9V
Current - Collector Cutoff :
100uA
Pd - Power Dissipation :
40W
Transition frequency(fT) :
4MHz
Current - Collector(Ic) :
1.5A
Collector - Emitter Voltage VCEO :
450V
Description :
Bipolar (BJT) Transistor 450V 1.5A 4MHz 40W Through Hole TO-92-FJ
Mfr. Part # :
3DD13003A
Model Number :
3DD13003A
Package :
TO-92-FJ
Description

Product Overview

The 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This RoHS-compliant product ensures high reliability.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Certifications: RoHS

Technical Specifications

ItemSymbolValueUnitNotes
Collector-Emitter Voltage (VBE=0)VCES700V
Collector-Emitter Voltage (IB=0)VCEO450V
Emitter-Base VoltageVEBO9V
Collector Current (DC)IC1.5A
Collector Current (pulse)ICP3.0A
Total Dissipation (TO-92-FJ/TO-92-FJ-F1)PC1W
Total Dissipation (DPAK/IPAK)PC10W
Total Dissipation (TO-126)PC20W
Total Dissipation (TO-220)PC40W
Junction TemperatureTj150
Storage TemperatureTstg-55~+150
Breakdown Voltage (CEO)V(BR)CEO450-500VIC=10mA, IB=0
Breakdown Voltage (CBO)V(BR)CBO700-830VIC=1mA, IE=0
Breakdown Voltage (EBO)V(BR)EBO9-13VIE=1mA, IC=0
Collector Cutoff CurrentICBO-100 AVCB=700V, IE=0
Collector Cutoff CurrentICEO-50 AVCE=450V, IB=0
Emitter Cutoff CurrentIEBO-10 AVEB=7V, IC=0
Collector-Emitter Saturation VoltageVCE(sat)8-40VVCE=10V, IC=200mA
Collector-Emitter Saturation VoltageVCE(sat)4-8VVCE=5V, IC=1.5A
Collector-Emitter Saturation VoltageVCE(sat)0.15-0.8VIC=0.5A, IB=0.1A
Collector-Emitter Saturation VoltageVCE(sat)0.5-2.0VIC=1.5A, IB=0.5A
Base-Emitter Saturation VoltageVBE(sat)0.6-1.8VIC=1.0A, IB=0.25A
Switching Time (fall)tf-0.7 SVCC=24V, IC=0.5A, IB1=-IB2=0.1A
Transition FrequencyfT4MHzVCE=10V, Ic=0.2A
Thermal Resistance (Junction Case TO-92-FJ/TO-92-FJ-F1)Rth(j-c)49/W
Thermal Resistance (Junction Case DPAK/IPAK)Rth(j-c)12.5/W
Thermal Resistance (Junction Case TO-126)Rth(j-c)6.25/W
Thermal Resistance (Junction Case TO-220)Rth(j-c)3.125/W

2409280102_Jilin-Sino-Microelectronics-3DD13003A_C5148290.pdf

Send your message to this supplier
Send Now

NPN transistor Jilin Sino Microelectronics 3DD13003A for power amplifier and switching power supplies

Ask Latest Price
Product Detail
Emitter-Base Voltage(Vebo) :
9V
Current - Collector Cutoff :
100uA
Pd - Power Dissipation :
40W
Transition frequency(fT) :
4MHz
Current - Collector(Ic) :
1.5A
Collector - Emitter Voltage VCEO :
450V
Contact Supplier
NPN transistor Jilin Sino Microelectronics 3DD13003A for power amplifier and switching power supplies

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement