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Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier
Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier
Specifications
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
175mW
Transition frequency(fT) :
8GHz
type :
NPN
Current - Collector(Ic) :
20mA
Collector - Emitter Voltage VCEO :
12V
Operating Temperature :
-65℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 12V 20mA 8GHz 175mW Surface Mount SOT-323-3
Mfr. Part # :
BFR 181W H6327
Model Number :
BFR 181W H6327
Package :
SOT-323-3
Description

Product Overview

The BFR181W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This transistor is provided in an industry-standard, easy-to-use, Pb-free (RoHS compliant) and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are available.

Product Attributes

  • Brand: Infineon Technologies
  • Type Marking: BFR181W
  • Package: SOT323
  • Certifications: RoHS compliant, AEC-Q101
  • Material: Silicon Bipolar
  • Features: Pb-free, Halogen free, Visible leads, ESD sensitive

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum RatingsVCEO12V
VCES20V
VCBO20V
VEBO2V
IC20mA
IB2mA
Ptot (TS ≤ 90 °C)175mW
Junction temperatureTJ150°C
Ambient temperatureTA-65 ... 150°C
Storage temperatureTStg-65 ... 150°C
Thermal ResistanceRthJS (Junction - soldering point)345K/WMeasured on collector lead at soldering point of pcb
DC CharacteristicsV(BR)CEO (IC = 1 mA, IB = 0)12VCollector-emitter breakdown voltage
ICES (VCE = 20 V, VBE = 0)100µACollector-emitter cutoff current
ICBO (VCB = 10 V, IE = 0)100nACollector-base cutoff current
IEBO (VEB = 1 V, IC = 0)1µAEmitter-base cutoff current
hFE (IC = 5 mA, VCE = 8 V, pulse measured)70 - 140-DC current gain
AC CharacteristicsfT (IC = 10 mA, VCE = 8 V, f = 500 MHz)6 - 8GHzTransition frequency
Ccb (VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded)0.29 - 0.45pFCollector-base capacitance
Cce (VCE = 10 V, f = 1 MHz, VBE = 0, base grounded)0.22pFCollector emitter capacitance
Ceb (VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded)0.35pFEmitter-base capacitance
NFmin (IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz)0.9dBMinimum noise figure
NFmin (IC = 2 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz)1.2dBMinimum noise figure
Gms (IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz)19dBPower gain, maximum stable
Gma (IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz)13.5dBPower gain, maximum available
|S21e|² (IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz)15.5dBTransducer gain
|S21e|² (IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz)10dBTransducer gain

2410121815_Infineon-BFR-181W-H6327_C534128.pdf

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Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier

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Product Detail
Emitter-Base Voltage(Vebo) :
2V
Current - Collector Cutoff :
100nA
Pd - Power Dissipation :
175mW
Transition frequency(fT) :
8GHz
type :
NPN
Current - Collector(Ic) :
20mA
Contact Supplier
Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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