The BFP740 is a low noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics, making it suitable for circuit designers requiring high performance in RF circuits.
| Parameter | Value | Conditions | Unit |
| Product Name | BFP740 | ||
| Device Type | Low Noise RF Transistor | ||
| Technology | Silicon Germanium Bipolar (SiGe BJT) | ||
| Package Type | SOT343 | ||
| Maximum Collector Current (IC) | 15 | mA | |
| Collector-Emitter Voltage (VCE) | 3 | V | |
| Frequency (f) | 5.5 | ZS = ZL = 50 | GHz |
| Transition Frequency (fT) | Varies with IC | VCE = Parameter in V | |
| 3rd Order Intercept Point at Output (OIP3) | Varies with IC, VCE | ZS = ZL = 50 , f = 5.5 GHz | dBm |
| Compression Point at Output (OP1dB) | Varies with IC, VCE | ZS = ZL = 50 , f = 5.5 GHz | dBm |
| Collector Base Capacitance (CCB) | Varies with VCB | f = 1 MHz | |
| Maximum Power Gain (Gmax) | Varies with IC, VCE, f | ||
| Minimum Noise Figure (NFmin) | Varies with f, IC, VCE | ZS = Zopt | |
| Noise Figure at 50 Ohm (NF50) | Varies with f, IC, VCE | ZS = 50 |