Specifications
Current - Collector Cutoff :
100uA
Pd - Power Dissipation :
75W
Transition frequency(fT) :
4MHz
type :
NPN
Current - Collector(Ic) :
4A
Collector - Emitter Voltage VCEO :
400V
Operating Temperature :
-
Description :
75W NPN 4A 400V TO-220 Single Bipolar Transistors RoHS
Mfr. Part # :
3DD13005MD-220
Model Number :
3DD13005MD-220
Package :
TO-220
Description

Product Overview

The 3DD13005MD is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.

Product Attributes

  • Brand: Jilin Sino-microelectronics Co., Ltd.
  • Product Code: 3DD13005MD
  • Halogen Free: NO
  • Certifications: RoHS product

Technical Specifications

Order CodesMarkingPackagePackagingIC (A)VCEO (V)PC (W) TO-220HFPC (W) TO-220
3DD13005MD-O-HF-N-BD13005MDTO-220FTube44003575
3DD13005MD-O-Z-N-CD13005MDTO-220Bag44003575
ParameterSymbolValue (min)Value (typ)Value (max)UnitTest Conditions
Collector-Emitter Voltage (VBE=0)VCES700V
Collector-Emitter Voltage (IB=0)VCEO400V
Emitter-Base VoltageVEBO9V
Collector Current (DC)IC4A
Collector Current (pulse)ICP8APulse Width = 5.0 ms, Duty Cycle < 10%
Base Current (DC)IB2A
Base Current (pulse)IBP4A
Total Dissipation (TO-220HF)PC35W
Total Dissipation (TO-220)PC75W
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-Emitter Breakdown VoltageV(BR)CEO400VIC=10mA,IB=0
Collector-Base Breakdown VoltageV(BR)CBO700VIC=1mA,IB=0
Emitter-Base Breakdown VoltageV(BR)EBO9VIE=1mA,IC=0
Collector Cut-off CurrentICBO100AVCB=700V, IE=0
Collector Cut-off CurrentICEO50AVCE=400V,IB=0
Emitter Cut-off CurrentIEBO10AVEB=9V, IC=0
DC Current GainHfe(1)850VCE =10V, IC=500mA
DC Current GainHfe(2)5VCE =5V, IC=2A
Collector-Emitter Saturation VoltageVCE(sat)(1)1.5VIC=1A, IB=0.2A
Collector-Emitter Saturation VoltageVCE(sat)(2)2.0VIC=4A, IB=1A
Base-Emitter Saturation VoltageVBE(sat)1.8VIC=2A, IB=0.5A
Fall Timetf0.7S
Storage Timets4SVCC=24V IC=2A,IB1=-IB2=0.4A
Transition FrequencyfT4MHzVCE=10V, IC=0.5A
Thermal Resistance (Junction to Case) TO-220HFRth(j-c)3.57/W
Thermal Resistance (Junction to Case) TO-220Rth(j-c)1.67/W

2411201841_Jilin-Sino-Microelectronics-3DD13005MD-220_C272477.pdf

Send your message to this supplier
Send Now

Fast switching power transistor Jilin Sino Microelectronics 3DD13005MD220 for energy saving lighting

Ask Latest Price
Current - Collector Cutoff :
100uA
Pd - Power Dissipation :
75W
Transition frequency(fT) :
4MHz
type :
NPN
Current - Collector(Ic) :
4A
Collector - Emitter Voltage VCEO :
400V
Contact Supplier
Fast switching power transistor Jilin Sino Microelectronics 3DD13005MD220 for energy saving lighting

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement