Infineon's RF transistors offer robust, flexible, small, and reliable solutions for complementary wireless applications. They are designed to meet the increasing demand for universal network availability and connectivity, supporting higher data rates and an expanding ecosystem of connected devices. These transistors provide superior performance, versatility, and supply security, making them ideal for various wireless communication systems, including mobile infrastructure, automotive infotainment, and Wi-Fi connectivity.
| Generation | fT (max) | NFmin (dB) | Application Focus | Key Features |
| 1st 3rd Gen. | 68 GHz | 1.42.1 dB | General-purpose LNAs | Low Noise Figure |
| 4th Gen. | 25 GHz | 1.1 dB | General-purpose LNAs | Available with ESD for improved robustness |
| 5th Gen. | 29 GHz | 0.9 dB | General-purpose LNAs | Available with ESD for improved robustness |
| 6th Gen. | 40 GHz | 0.7 dB | Noise | Very low noise |
| 7th Gen. | 44 GHz | 0.6 dB | Noise / Complementary wireless connectivity | High transition frequency (45 GHz), High gain (19 dB), NF level (0.65 dB) at 2.4 GHz, High linearity (OP1dB +8.5 dBm, OIP3 +19 dBm) at 2.4 GHz, 1.5 kV HBM ESD robustness, Broad frequency range (450 MHz to 12 GHz), Reduced power consumption |
| 8th Gen. | 80 GHz | 0.5 dB | High-performance WiFi connectivity (LNAs) | Best-in-class NF and Gmax, Improved BiC compared to previous generations and competitors |