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Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub GHz mixer applications
Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub GHz mixer applications
Specifications
Emitter-Base Voltage(Vebo) :
2.5V
Pd - Power Dissipation :
280mW
Transition frequency(fT) :
1.4GHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
25mA
Collector - Emitter Voltage VCEO :
15V
Description :
280mW NPN 25mA 15V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # :
BFS17PE6327HTSA1
Model Number :
BFS17PE6327HTSA1
Package :
SOT-23
Description

Product Overview

The BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, making it suitable for demanding RF designs.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon
  • Certifications: Pb-free (RoHS compliant)
  • Package: SOT23

Technical Specifications

ParameterSymbolValueUnitNote or Test Condition
Maximum collector-emitter voltageVCEO15V
Maximum collector currentIC25mA
Noise figureNF3.5dBIC = 2 mA, VCE = 5 V, ZS = 50, f = 800 MHz
3rd order output intercept pointOIP321.5dBmVCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt
1 dB output compression pointP-1dB10dBmIC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 800 MHz
Transition frequencyfT1.4GHzIC = 2 mA, VCE = 5 V, f = 200 MHz
Maximum total power dissipationPtot280mWTS 95 C
Collector-emitter breakdown voltageV(BR)CEO15VIC = 1 mA, IB = 0
DC current gainhFE40 - 150IC = 2 mA, VCE = 1 V pulse measured
Collector-emitter saturation voltageVCEsat0.1 - 0.4VIC = 10 mA, IB = 1 mA
Collector-base capacitanceCcb0.55 - 0.8pFVCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded
Emitter-base capacitanceCeb0.9 - 1.45pFVEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded

2304140030_Infineon-BFS17PE6327HTSA1_C151490.pdf

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Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub GHz mixer applications

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Product Detail
Emitter-Base Voltage(Vebo) :
2.5V
Pd - Power Dissipation :
280mW
Transition frequency(fT) :
1.4GHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
25mA
Contact Supplier
Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub GHz mixer applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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