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Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency
Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency
Specifications
Current - Collector Cutoff :
400nA
Pd - Power Dissipation :
125mW
Transition frequency(fT) :
-
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
55mA
Collector - Emitter Voltage VCEO :
2.25V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 2.25V 55mA 125mW Surface Mount SOT-343-4
Mfr. Part # :
BFP843H6327
Model Number :
BFP843H6327
Package :
SOT-343-4
Description

Product Overview

The BFP843 is a robust, low-noise, broadband, pre-matched bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.

Product Attributes

  • Brand: Infineon Technologies
  • Product Name: BFP843
  • Product Type: Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
  • Package: SOT343
  • Origin: Germany

Technical Specifications

ParameterSymbolMinTypMaxUnitDescription
Maximum Ratings
Collector-Emitter VoltageVCEO5VTA = 25 C
Collector-Base VoltageVCBO15VTA = 25 C
Emitter-Base VoltageVEBO2VTA = 25 C
Collector CurrentIC50mATA = 25 C
Total Power DissipationPtot300mWTA = 25 C
Thermal Characteristics
Thermal Resistance Junction to AmbientRthJA333K/WSOT343
DC Characteristics
Collector-Emitter Saturation VoltageVCE(sat)0.30.5VIC = 20 mA, IB = 1 mA, TA = 25 C
DC Current GainhFE30VCE = 1.8 V, IC = 15 mA, TA = 25 C
Base-Emitter Saturation VoltageVBE(sat)0.70.9VIC = 20 mA, IB = 1 mA, TA = 25 C
General AC Characteristics
Current Gain - Bandwidth ProductfT12GHzVCE = 1.8 V, IC = 15 mA, TA = 25 C
Collector-Emitter Breakdown VoltageVCEO(sus)5VIC = 1 mA, TA = 25 C
Noise Figure (5.5 GHz)NF0.81.2dBVCE = 1.8 V, IC = 8 mA, ZS = Zopt
Noise Figure (5.5 GHz)NF1.01.5dBVCE = 1.8 V, IC = 15 mA, ZS = Zopt
Maximum Available Gain (5.5 GHz)MAG16dBVCE = 1.8 V, IC = 15 mA
3rd Order Intercept Point (Output)OIP335dBmVCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz
1 dB Compression Point (Output)OP1dB17dBmVCE = 1.8 V, IC = 15 mA, ZS = ZL = 50 , f = 5.5 GHz

2412111203_Infineon-BFP843H6327_C3199253.pdf

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Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency

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Product Detail
Current - Collector Cutoff :
400nA
Pd - Power Dissipation :
125mW
Transition frequency(fT) :
-
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
55mA
Contact Supplier
Low noise broadband bipolar RF transistor Infineon BFP843H6327 robust pre matched for high frequency

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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