MachineU > China Products
RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems
RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems
Specifications
Pd - Power Dissipation :
100mW
Transition frequency(fT) :
45GHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
40mA
Collector - Emitter Voltage VCEO :
2.5V
Description :
Bipolar (BJT) Transistor NPN 2.5V 40mA 45GHz 100mW Surface Mount SOT-343
Mfr. Part # :
BFP520H6327
Model Number :
BFP520H6327
Package :
SOT-343
Description

Infineon RF Transistors

Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next-generation mobile systems, infrastructure, and automotive applications.

Product Attributes

  • Brand: Infineon
  • Material: Silicon-germanium (SiGe) based on B9 technology
  • Origin: In-house process builds

Technical Specifications

Product Series/GenerationKey FeaturesTechnical BenefitsCustomer BenefitsFrequency RangeNFmin (dB)fT (max) (GHz)Gmax (dB)OP1dB (dBm)OIP3 (dBm)Current Consumption (mA)ESD Robustness
RF Transistors 7th Generation (B7HF)Discrete Heterojunction Bipolar Transistors (HBT) for LNA solutionsEnhanced high-frequency characteristics, reduced parasitic capacitanceIncreased RF link budget and SNR, wider coverage, higher order modulation support450 MHz to 12 GHz0.45 (sub-GHz) to 0.9 (5.5 GHz)4419 (at 10 GHz)+8.5 (at 2.4 GHz)+19 (at 2.4 GHz)13 (at 2.4 GHz)1.5 kV HBM
RF Transistors 8th Generation (B9HF)Discrete Heterojunction Bipolar Transistors (HBT) for high-performance LNA solutionsReduced parasitic capacitance, improved high-frequency characteristicsIncreased RF link budget and SNR, support for very high throughput wireless specifications(Not explicitly specified, but implied to be higher than 7th gen)0.6 (at 5.5 GHz)80(Not explicitly specified, but implied to be higher than 7th gen)(Not explicitly specified)(Not explicitly specified)(Not explicitly specified)(Not explicitly specified)

2410122020_Infineon-BFP520H6327_C439779.pdf

Send your message to this supplier
Send Now

RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems

Ask Latest Price
Product Detail
Pd - Power Dissipation :
100mW
Transition frequency(fT) :
45GHz
type :
NPN
Number :
1 NPN
Current - Collector(Ic) :
40mA
Collector - Emitter Voltage VCEO :
2.5V
Contact Supplier
RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement