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Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits
Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits
Specifications
Current - Collector Cutoff :
500nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
46GHz
type :
NPN
Current - Collector(Ic) :
50mA
Collector - Emitter Voltage VCEO :
4.1V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 4.1V 50mA 46GHz 200mW TSFP-4
Mfr. Part # :
BFP650FH6327
Model Number :
BFP650FH6327
Package :
TSFP-4
Description

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

The BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.

Product Attributes

  • Brand: Infineon Technologies
  • Material: Silicon Germanium (SiGe)
  • Origin: Germany (Implied by publisher location)

Technical Specifications

ParameterValueConditionsUnit
Maximum Ratings
Collector-Emitter Voltage20V
Collector-Base Voltage20V
Emitter-Base Voltage5V
Collector Current100mA
Total Power Dissipation1.2Tamb = 25CW
Storage Temperature-65 to 150C
Thermal Characteristics
Thermal Resistance Junction to Ambient104(calculated)K/W
Thermal Resistance Junction to Case40(calculated)K/W
Electrical Characteristics (Typical, unless otherwise specified)
Collector-Emitter Breakdown Voltage20IC = 1 mA, IB = 0V
Collector-Emitter Breakdown Voltage20IB = 10 A, IE = 0V
Emitter-Base Breakdown Voltage5IE = 1 mA, IC = 0V
Collector Cut-off Current0.01VCE = 20 V, VBE = 0A
Emitter Cut-off Current0.01VEB = 5 V, VCE = 0A
DC Current Gain (hFE)100VCE = 3 V, IC = 30 mA
Transition Frequency (fT)65VCE = 3 V, IC = 30 mA, f = 1 GHzGHz
Collector-Base Capacitance (CCB)0.6VCB = 10 V, f = 1 MHzpF
Noise Figure (NFmin)0.6VCE = 3 V, IC = 6 mA, f = 1 GHzdB
Noise Figure (NFmin)1.0VCE = 3 V, IC = 30 mA, f = 1 GHzdB
Noise Figure (NF50)1.0VCE = 3 V, IC = 6 mA, f = 1 GHz, ZS = 50 dB
Noise Figure (NF50)1.5VCE = 3 V, IC = 30 mA, f = 1 GHz, ZS = 50 dB
3rd Order Intercept Point (OIP3)38ZS = ZL = 50 , VCE = 3 V, IC = 30 mA, f = 1 GHzdBm

2410121513_Infineon-BFP650FH6327_C3198367.pdf

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Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits

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Product Detail
Current - Collector Cutoff :
500nA
Pd - Power Dissipation :
200mW
Transition frequency(fT) :
46GHz
type :
NPN
Current - Collector(Ic) :
50mA
Collector - Emitter Voltage VCEO :
4.1V
Contact Supplier
Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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